Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Patent Title (中): 其半导体结构及其制造方法
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Application No.: US13401634Application Date: 2012-02-21
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Publication No.: US20130214340A1Publication Date: 2013-08-22
- Inventor: Shih-Hung Chen , Hang-Ting Lue , Yen-Hao Shih
- Applicant: Shih-Hung Chen , Hang-Ting Lue , Yen-Hao Shih
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L21/283
Abstract:
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first stacked structure, and a first conductive layer. The first stacked structure is formed on the substrate and includes a conductive structure and an insulating structure, and the conductive structure is disposed adjacent to the insulating structure. The first conductive layer is formed on the substrate and surrounds two side walls and a part of the top portion of the first stacked structure for exposing a portion of the first stacked structure.
Public/Granted literature
- US09035369B2 Semiconductor structure and manufacturing method of the same Public/Granted day:2015-05-19
Information query
IPC分类:
