Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS
- Patent Title (中): 基板加工设备
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Application No.: US13767195Application Date: 2013-02-14
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Publication No.: US20130220547A1Publication Date: 2013-08-29
- Inventor: Kazuya NAGASEKI , Etsuji ITO , Akihiro YOKOTA , Shinji HIMORI , Shoichiro MATSUYAMA
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-029860 20120214
- Main IPC: H01L21/465
- IPC: H01L21/465

Abstract:
A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.
Public/Granted literature
- US09390943B2 Substrate processing apparatus Public/Granted day:2016-07-12
Information query
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