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公开(公告)号：US20210269258A1
公开(公告)日：2021-09-02
申请号：US17186932
申请日：2021-02-26
发明人： Kazuki MOYAMA , Kazuya NAGASEKI , Toshiya MATSUDA
摘要： A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.
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公开(公告)号：US20210050240A1
公开(公告)日：2021-02-18
申请号：US16942926
申请日：2020-07-30
发明人： Kazuki MOYAMA , Kazuya NAGASEKI
IPC分类号： H01L21/677 , H01L21/67 , H01L21/683 , H01L21/687
摘要： A semiconductor substrate is transferred accurately with respect to an edge ring. A transfer apparatus uses a transfer method for a substrate processing system, where the method includes tray loading, measuring, positioning, substrate placement, and tray removing. The tray loading includes loading a tray on which a semiconductor substrate and an edge ring are placeable into a mounting chamber including a support. The measurement includes measuring a position of the edge ring placed on the tray and obtaining position information about the edge ring. The positioning includes positioning the semiconductor substrate based on the position information. The substrate placement includes placing the positioned semiconductor substrate onto the tray. The tray removing includes removing the tray on which the semiconductor substrate and the edge ring are placed from the mounting chamber.
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公开(公告)号：US20200312623A1
公开(公告)日：2020-10-01
申请号：US16834612
申请日：2020-03-30
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/683 , H01L21/67 , C23C16/455
摘要： A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.
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公开(公告)号：US20200234930A1
公开(公告)日：2020-07-23
申请号：US16738369
申请日：2020-01-09
IPC分类号： H01J37/32
摘要： An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.
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5.发明公开公开(公告)号：US20240207882A1
公开(公告)日：2024-06-27
申请号：US18419592
申请日：2024-01-23
IPC分类号： B05C5/02 , B05C11/10 , B05C17/005 , C23C14/00 , C23C16/455
CPC分类号： B05C5/02 , B05C11/1013 , B05C17/00536 , C23C14/0042 , C23C14/0063 , C23C16/45557
摘要： A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
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公开(公告)号：US20210375592A1
公开(公告)日：2021-12-02
申请号：US17394783
申请日：2021-08-05
发明人： Kazuki MOYAMA , Kazuya NAGASEKI
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065
摘要： A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.
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公开(公告)号：US20210013015A1
公开(公告)日：2021-01-14
申请号：US17030522
申请日：2020-09-24
发明人： Kazuya NAGASEKI , Shinji HIMORI , Mitsunori OHATA
摘要： An apparatus includes a plasma processing container; a workpiece placement table disposed in the plasma processing container; a dielectric member having a facing surface that faces the workpiece placement table; an antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the plasma processing container via the dielectric member; an electromagnet group disposed along an outer circumference of the plasma processing container and configured to form a magnetic field in the plasma processing container; and a controller configured to control magnitudes of electric currents flowing through respective electromagnets of the electromagnet group differently from each other, to generate a magnetic gradient along a circumferential direction in the magnetic field that exists only in an outer circumferential space in the plasma processing container.
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公开(公告)号：US20190333739A1
公开(公告)日：2019-10-31
申请号：US16393261
申请日：2019-04-24
发明人： Koichi NAGAMI , Kazuya NAGASEKI
IPC分类号： H01J37/32 , H01L21/3065
摘要： An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.
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9.发明申请公开(公告)号：US20190164727A1
公开(公告)日：2019-05-30
申请号：US16196088
申请日：2018-11-20
发明人： Naoki SUGAWA , Naoyuki SATOH , Kazuya NAGASEKI
IPC分类号： H01J37/32 , H01L21/683
摘要： A part for a semiconductor manufacturing apparatus, the part being enabled to cause electricity to pass through and including an insulating member.
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公开(公告)号：US20130220547A1
公开(公告)日：2013-08-29
申请号：US13767195
申请日：2013-02-14
IPC分类号： H01L21/465
CPC分类号： H01L21/465 , C23C14/35 , C23C14/351 , C23C14/352 , H01J37/32091 , H01J37/3266 , H01J37/32669 , H01J37/32688 , H01J37/345 , H01J37/3452 , H01L21/32136
摘要： A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.
摘要翻译： 基板处理装置在供给高频电力的下电极与面向下电极的上电极之间的处理空间中产生电场，通过使用由下述电极产生的等离子体，对安装在下电极上的基板进行等离子体处理 电场。 处理空间中的等离子体密度的分布由通过控制设置在与处理空间相对的上电极的顶表面处设置的多个电磁体而产生的磁场来控制。
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