发明申请
US20130221487A1 METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF
审中-公开
形成半导体存储器件电阻的方法及其结构
- 专利标题： METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF
- 专利标题（中）： 形成半导体存储器件电阻的方法及其结构
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申请号： US13604468申请日： 2012-09-05
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公开(公告)号： US20130221487A1公开(公告)日： 2013-08-29
- 发明人: Jeong Guen PARK
- 申请人： Jeong Guen PARK
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2012-0018911 20120224
- 主分类号： H01L29/86
- IPC分类号： H01L29/86 ; H01L21/02
摘要：
A resistor in a semiconductor memory device is formed by the steps of, inter alia: forming a first helical resistor extending from a first point toward a center in a clockwise or counterclockwise direction, forming a second helical resistor extending from the center to a second point in an opposite direction, wherein the first and second helical resistors are connected to each other at the center, and wherein the first and second helical resistors do not overlap.
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