A semiconductor die including strain relief for through substrate vias (TSVs). The semiconductor die includes a semiconductor substrate having an active face. The semiconductor substrate includes conductive layers connected to the active face, The semiconductor die also includes a through substrate via extending only through the substrate. The through substrate via may include a substantially constant diameter through a length of the through substrate via. The through substrate via may be filled with a conductive filler material. The semiconductor die also includes an isolation layer surrounding the through substrate via. The isolation layer may include two portions: a recessed portion near the active face of the substrate capable of relieving stress from the conductive filler material, and a dielectric portion. A composition of the recessed portion may differ from the dielectric portion.