发明申请
- 专利标题： METHOD FOR THE PRODUCTION OF A SUBSTRATE COMPRISING EMBEDDED LAYERS OF GETTER MATERIAL
- 专利标题（中）： 用于生产包含嵌入层材料的基材的方法
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申请号： US13883480申请日： 2011-10-31
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公开(公告)号： US20130221497A1公开(公告)日： 2013-08-29
- 发明人: Xavier Baillin
- 申请人： Xavier Baillin
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'energie atomique et aux ene alt
- 当前专利权人： Commissariat a l'energie atomique et aux ene alt
- 当前专利权人地址： FR Paris
- 优先权： FR10-59246 20101109
- 国际申请： PCT/EP11/69080 WO 20111031
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; H01L23/26
摘要：
A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the first stack into contact with the second stack and performing thermocompression, the layers of the first and of the second getter material being arranged between the first and the second support, at a temperature greater than or equal to a lowest temperature among thermal activation temperatures of the first and of the second getter material, to bond the layers of the first and second getter materials together.
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