公开(公告)号：US10901900B2

公开(公告)日：2021-01-26

申请号：US14394982

申请日：2013-04-12

申请人： Commissariat a l'energie atomique et aux ene alt ,  BULL SAS

发明人： Christian Bernard ,  Eric Guthmuller ,  Huy Nam Nguyen

IPC分类号： G06F12/08 ,  G06F12/0817 ,  G06F12/0813

摘要： A cache coherence management system includes: a set of directories distributed between nodes of a network for interconnecting processors including cache memories, each directory including a correspondence table between cache lines and information fields on the cache lines; and a mechanism updating the directories by adding, modifying, or deleting cache lines in the correspondence tables. In each correspondence table and for each cache line identified, at least one field is provided for indicating a possible blocking of a transaction relative to the cache line considered, when the blocking occurs in the node associated with the correspondence table considered. The system further includes a mechanism detecting fields indicating a transaction blocking and restarting each transaction detected as blocked from the node in which it is indicated as blocked.

公开(公告)号：US20150294903A1

公开(公告)日：2015-10-15

申请号：US14425891

申请日：2012-09-05

申请人： Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet ,  Romain Wacquez

发明人： Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet ,  Romain Wacquez

IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/265 ,  H01L21/84

CPC分类号： H01L21/76283 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/84

摘要： A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second semiconductor layer, comprising the following steps: etching a trench through the first semiconductor layer, the dielectric layer and a part of the thickness of the second semiconductor layer, thus defining, in the first semiconductor layer, one active region of the microelectronic device, ionic implantation in one or more side walls of the trench, at the level of the second semiconductor layer, modifying the crystallographic properties and/or the chemical properties of the implanted semiconductor, etching of the implanted semiconductor such that at least a part of the trench extends under a part of the active region, —filling of the trench with a dielectric material, forming an isolation trench surrounding the active region and comprising portions extending under a part of the active region.

摘要翻译： 一种在包括第一半导体层，电介质层和第二半导体层的衬底中制造微电子器件的方法，包括以下步骤：通过所述第一半导体层，所述电介质层和所述第一半导体层的厚度的一部分蚀刻沟槽 从而在所述第一半导体层中限定所述微电子器件的一个有源区域，在所述沟槽的一个或多个侧壁中的离子注入，在所述第二半导体层的水平处，修改所述晶体学性质和/或所述第二半导体层， 注入半导体的化学性质，蚀刻注入的半导体，使得沟槽的至少一部分在有源区的一部分下方延伸，用电介质材料填充沟槽，形成围绕有源区的隔离沟槽，并且包括 在有源区域的一部分下延伸的部分。

公开(公告)号：US20150243737A1

公开(公告)日：2015-08-27

申请号：US14632411

申请日：2015-02-26

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  ALCATEL LUCENT

发明人： Rene ESCOFFIER

IPC分类号： H01L29/20 ,  H01L29/06 ,  H03K17/687 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L21/8252 ,  H01L27/0248 ,  H01L27/0605 ,  H01L29/7786 ,  H03K17/302 ,  H03K17/687 ,  H03K2017/307

摘要： An electronic device including at least:a first HEMT transistor,bias means able to at least reverse bias the first HEMT transistor by applying an electric voltage VSD of a positive value between a source of the first HEMT transistor and a drain of the first HEMT transistor,and wherein the first HEMT transistor is able to be ON when a value of an electric voltage VGD between a gate of the first HEMT transistor and the drain of the first HEMT transistor is higher than a value of a threshold voltage Vth of the first HEMT transistor,the electronic device having, during a forward biasing, a behaviour similar to that of a forward biased or reverse biased Zener diode.

摘要翻译： 一种电子装置，至少包括：第一HEMT晶体管，能够通过在第一HEMT晶体管的源极和第一HEMT晶体管的漏极之间施加正值的电压VSD，至少反向偏置第一HEMT晶体管的偏置装置 ，并且其中当所述第一HEMT晶体管的栅极与所述第一HEMT晶体管的漏极之间的电压VGD的值高于所述第一HEMT晶体管的漏极的值之间时，所述第一HEMT晶体管能够导通，所述阈值电压高于所述第一HEMT晶体管的阈值电压Vth的值 在正向偏置期间，电子器件具有类似于正向偏置或反向偏置齐纳二极管的行为。

公开(公告)号：US20150195029A1

公开(公告)日：2015-07-09

申请号：US14584119

申请日：2014-12-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Marc Laugeois

IPC分类号： H04B7/08 ,  H04L27/26

CPC分类号： H04B7/0814 ,  H04B7/0808 ,  H04B7/0817 ,  H04B7/082 ,  H04B7/0837 ,  H04B7/0848 ,  H04B7/0857 ,  H04L27/2656

摘要： The invention relates to a receiver of a signal built as successive frames, comprising a plurality of antennas, a signal receiving chain associated with each antenna, and a power amplifier on each receiving chain to which is applied a gain set point provided by a gain control unit characterized in that it comprises an antenna selecting unit configured to select one antenna from the plurality of antennas, and a time synchronizing unit configured to determine the frame start and end times in the signal received by the selected antenna. The antenna selecting unit is further configured to assess the gain set point of each receiving chain and to eliminate from the selection each antenna associated to a receiving chain which gain set point in not in a steady state.

摘要翻译： 本发明涉及构成为连续帧的信号的接收机，包括多个天线，与每个天线相关联的信号接收链，以及在每个接收链上的功率放大器，其上施加由增益控制提供的增益设定点 其特征在于，其包括：天线选择单元，被配置为从所述多个天线中选择一个天线;以及时间同步单元，被配置为确定由所选择的天线接收的信号中的帧开始和结束时间。 天线选择单元还被配置为评估每个接收链的增益设置点，并且从选择中消除与接收链相关联的每个天线，其中增益设定点不处于稳定状态。

公开(公告)号：US20150178978A1

公开(公告)日：2015-06-25

申请号：US14580773

申请日：2014-12-23

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Pierre DURAND ,  Etienne LABYT

IPC分类号： G06T15/08 ,  G06T19/20

CPC分类号： G06T15/08 ,  G06T5/50 ,  G06T19/20 ,  G06T2210/41 ,  G06T2211/40 ,  G06T2219/2021

摘要： This processing method provides the ability to process a volume mode with an object intended to be added to or subtracted from said model. The volume model includes points arranged according to a spatial grid in a first reference system, each point being assigned an intensity value. The object has points positioned in a second reference system that is distinct from the first reference system.The method includes the calculation, for each point of the object, of an image point in the first reference system using a transfer function.The method further includes the modification of the intensity of points of the volume model by applying a correction function associated with each image point, the value of the correction function at a point of the volume model being dependent on the position of said point relative to said image point with which said correction function is associated.

摘要翻译： 该处理方法提供了处理具有要被添加到或从所述模型中减去的对象的体积模式的能力。 体积模型包括根据第一参考系统中的空间网格排列的点，每个点被分配强度值。 对象具有位于与第一参考系统不同的第二参考系统中的点。 该方法包括使用传递函数针对对象的每个点计算第一参考系统中的图像点。 该方法还包括通过应用与每个图像点相关联的校正函数来修改体积模型的点的强度，在体积模型的点处的校正函数的值取决于所述点相对于所述点的位置 与所述校正功能相关联的图像点。

公开(公告)号：US20150156890A1

公开(公告)日：2015-06-04

申请号：US14551977

申请日：2014-11-24

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Sophie GIROUD ,  Christine FERRANDON

IPC分类号： H05K3/46 ,  C23F1/04

CPC分类号： H05K3/46 ,  B81C1/00285 ,  C23F1/04 ,  H01L23/10 ,  H01L23/26 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

摘要： Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least the steps of:etching the blind hole through a first face of the substrate,depositing a continuous layer of getter material on the whole of the first face of the substrate and at least on the side walls of the blind hole,etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material,in which the step of etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.

摘要翻译： 一种生产基材的方法，包括布置在至少一个盲孔的壁上的至少一种吸气剂材料，该方法至少包括以下步骤：通过基材的第一面蚀刻盲孔，在其上沉积连续的吸气剂层 整个衬底的第一面和至少在盲孔的侧壁上，蚀刻位于衬底的第一面上的吸气剂层的一部分，使得衬底的所述第一面不再被覆盖 吸气剂材料，其中蚀刻吸气剂材料层的一部分的步骤包括通过离子束加工或化学机械平面化或抛光实施蚀刻。

公开(公告)号：US20150151959A1

公开(公告)日：2015-06-04

申请号：US14555913

申请日：2014-11-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Xavier BAILLIN

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0038 ,  B81C1/00285 ,  H01L23/10 ,  H01L23/26 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00012 ,  H01L2924/00

摘要： An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated, a substrate of which one face delimits one side of the cavity, at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communicating together, first portions of getter material covering at least in part side walls of the trenches without entirely filling the trenches, and completely covering the trenches at said face of the substrate, an opening formed through one of the first portions of getter material or through the substrate and making the interior volumes of the trenches communicate with an interior volume of the cavity.

摘要翻译： 一种封装结构，其至少包括：密封腔体，其中微型器件被封装在其中;衬底，其一个面限定所述空腔的一侧;至少两个通过所述衬底的所述面形成的沟槽， 沟槽连通的第一部分吸气材料覆盖沟槽的至少部分侧壁，而不完全填充沟槽，并且完全覆盖基板的所述表面处的沟槽，通过吸气剂的第一部分之一形成的开口 材料或通过基底并使沟槽的内部容积与空腔的内部容积连通。

公开(公告)号：US20150124749A1

公开(公告)日：2015-05-07

申请号：US14533480

申请日：2014-11-05

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Baher MAWLAWI ,  Jean-Baptiste DORE ,  Jean-Marie GORCE

IPC分类号： H04W74/08 ,  H04W72/04 ,  H04L5/00

CPC分类号： H04W74/0816 ,  H04L5/0005 ,  H04L5/0053 ,  H04W72/00 ,  H04W74/004

摘要： The invention relates to a multiple access method to a frequency band of a communication channel of a communication network with carrier sensing and collision avoidance, said frequency band being broken down into a set of sub-bands (SB0, SB1, . . . , SBi, . . . , SBn) of the communication channel, characterised in that it comprises at a source node, after it has been detected that the communication channel is available, the transmission to a destination node of several request to send messages on the communication channel (RTS NS0, RTS NS1), each of said messages being sent on a sub-band of the communication channel.

摘要翻译： 本发明涉及一种对具有载波侦听和避免冲突的通信网络的通信信道的频带的多址方式，所述频带被分解成一组子带（SB0，SB1，...，SBi ，...，SBn），其特征在于，在源节点包括在已经检测到通信信道可用之后，向目的地节点发送在通信信道上发送消息的若干请求的传输 （RTS NS0，RTS NS1），每个所述消息在通信信道的子带上发送。

公开(公告)号：US20150115769A1

公开(公告)日：2015-04-30

申请号：US14232092

申请日：2012-07-09

申请人： Guillaume Savelli ,  Philippe Coronel ,  Stephane Monfray ,  Thomas Skotnicki

发明人： Guillaume Savelli ,  Philippe Coronel ,  Stephane Monfray ,  Thomas Skotnicki

IPC分类号： F03G7/06 ,  H02N2/18

CPC分类号： F03G7/06 ,  F03G7/065 ,  H01L41/1136 ,  H02N2/18 ,  H02N2/188

摘要： An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.

摘要翻译： 一种将热能转换成电能的组件，包括：至少一个温度敏感的双金属条，布置在由热源和相互面对的冷源界定的空间中，双金属条沿着纵轴延伸; 固定在所述敏感元件上并且从所述敏感元件横向延伸并且包括自由端的至少一个悬挂元件; 以及至少一个压电元件，其从相对于所述敏感元件固定的部分悬挂并由所述悬挂元件振动，使得当所述双金属条改变构型并且所述悬挂元件与所述压电元件接触时，所述压电元件被振动，所述压电元件位于 在双金属条和热源之间限定的空间之外以及双金属条和冷源之间的空间之外。

公开(公告)号：US20150111339A1

公开(公告)日：2015-04-23

申请号：US14396948

申请日：2013-04-23

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Dimitry Aldakov ,  Valentina Ivanova-Hristova ,  Peter Reiss ,  Sylvia Sanchez

IPC分类号： H01L51/00 ,  H01L51/42

CPC分类号： B05D1/36 ,  B05D1/38 ,  B05D3/002 ,  H01L51/0003 ,  H01L51/4226 ,  H01L51/4233 ,  Y02E10/549

摘要： The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterised in that it comprises the steps of: a) functionalising the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle.The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

摘要翻译： 本发明涉及一种在纳米结构金属氧化物（NSMO）衬底上沉积纳米粒子（NPs）的方法，其特征在于其包括以下步骤：a）用携带第一功能的双功能偶联剂对NSMO衬底进行功能化， 功能是与NSMO形成键的膦酸官能团，以及旨在与纳米颗粒形成键的第二个功能; 和b）通过与偶联剂的第二功能的键接合纳米颗粒。 本发明还涉及一种包含纳米结构的金属氧化物衬底的叠层，该纳米结构金属氧化物衬底通过具有第一功能的双功能偶联剂覆盖纳米颗粒，该第一个功能是膦酸化功能并与NSMO形成键，以及预期的第二个功能 以形成与纳米颗粒的键。 本发明适用于微电子领域，特别适用于生产电极和生产光电板。