发明申请
- 专利标题： METALLIC CAPPED INTERCONNECT STRUCTURE WITH HIGH ELECTROMIGRATION RESISTANCE AND LOW RESISTIVITY
- 专利标题（中）： 具有高电阻率和低电阻率的金属插接式互连结构
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申请号： US13404875申请日： 2012-02-24
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公开(公告)号： US20130221527A1公开(公告)日： 2013-08-29
- 发明人: Chih-Chao Yang , Chao-Kun Hu
- 申请人： Chih-Chao Yang , Chao-Kun Hu
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768
摘要：
An interconnect structure including a metallic cap that covers 80 to 99% of the entire surface of an underlying conductive metal feature is provided utilizing a metal reflow process. Laterally extending portions of the conductive metal feature are located on vertical edges of the metallic cap, and each of the laterally extending portions of the conductive metal feature has an uppermost surface that is coplanar with an uppermost surface of the metallic cap.
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