公开(公告)号：US08889546B2

公开(公告)日：2014-11-18

申请号：US13600773

申请日：2012-08-31

申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu ,  Surbhi Mittal

发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu ,  Surbhi Mittal

IPC分类号： H01L21/4763 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/02362 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76868 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.

摘要翻译： 提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面 的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。

公开(公告)号：US20130221527A1

公开(公告)日：2013-08-29

申请号：US13404875

申请日：2012-02-24

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53223 ,  H01L21/76849 ,  H01L21/76882 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure including a metallic cap that covers 80 to 99% of the entire surface of an underlying conductive metal feature is provided utilizing a metal reflow process. Laterally extending portions of the conductive metal feature are located on vertical edges of the metallic cap, and each of the laterally extending portions of the conductive metal feature has an uppermost surface that is coplanar with an uppermost surface of the metallic cap.

摘要翻译： 使用金属回流工艺来提供包括覆盖下面的导电金属特征的整个表面的80-99％的金属盖的互连结构。 导电金属特征的横向延伸部分位于金属盖的垂直边缘上，并且导电金属特征的每个横向延伸部分具有与金属盖的最上表面共面的最上表面。

公开(公告)号：US20120199976A1

公开(公告)日：2012-08-09

申请号：US13448780

申请日：2012-04-17

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H01L23/532

CPC分类号： H01L21/76808 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76835 ,  H01L2221/1036 ,  Y10T29/49204

摘要： An interconnect structure including a lower interconnect level with a first dielectric layer having a first conductive material embedded therein; a dielectric capping layer located on the first dielectric layer and some portions of the first conductive material; an upper interconnect level including a second dielectric layer having at least one via opening filled with a second conductive material and at least one overlying line opening filled with the second conductive material disposed therein, wherein the at least one via opening is in contact with the first conductive material in the lower interconnect level by a via gouging feature; a dielectric liner on sidewalls of the at least one via opening; and a first diffusion barrier layer on sidewalls and a bottom of both the at least one via opening and the at least one overlying line opening. A method of forming the interconnect structure is also provided.

摘要翻译： 一种互连结构，包括具有嵌入其中的第一导电材料的第一介电层的下部互连电平; 位于所述第一电介质层上的电介质覆盖层和所述第一导电材料的一些部分; 上部互连级别，包括具有填充有第二导电材料的至少一个通孔开口的第二介电层和填充有设置在其中的第二导电材料的至少一个覆盖的线路开口，其中所述至少一个通孔与第一导电材料接触 导电材料在下互连级别通过通孔气刨特征; 在所述至少一个通孔开口的侧壁上的电介质衬垫; 以及在所述至少一个通孔开口和所述至少一个覆盖线开口的侧壁和底部上的第一扩散阻挡层。 还提供了形成互连结构的方法。

公开(公告)号：US20090278229A1

公开(公告)日：2009-11-12

申请号：US12119125

申请日：2008-05-12

申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

公开(公告)号：US08823176B2

公开(公告)日：2014-09-02

申请号：US12247632

申请日：2008-10-08

申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu ,  Surbhi Mittal

发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu ,  Surbhi Mittal

IPC分类号： H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L23/53238 ,  H01L21/02362 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76868 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.

摘要翻译： 提供一种互连结构，其包括至少存在于嵌入在互连电介质材料中的至少一种导电材料的上表面的至少一部分上的含贵金属的盖。 在一个实施方案中，含贵金属的帽是不连续的，例如以至少一种导电材料的表面上的核或岛状存在。 在另一个实施方案中，含贵金属的盖在至少一种导电材料的表面上具有不均匀的厚度。

公开(公告)号：US20110092031A1

公开(公告)日：2011-04-21

申请号：US12976445

申请日：2010-12-22

申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

IPC分类号： H01L21/283

CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

公开(公告)号：US08013446B2

公开(公告)日：2011-09-06

申请号：US12190277

申请日：2008-08-12

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is provided that has enhanced electromigration reliability without degrading circuit short yield, and improved technology extendibility. The inventive interconnect structure includes a dielectric material having a dielectric constant of about 3.0 or less. The dielectric material has at least one conductive material embedded therein. A nitrogen-containing noble metal cap is located predominately (i.e., essentially) on an upper surface of the at least one conductive region. The nitrogen-containing noble metal cap does not extend onto an upper surface of the dielectric material. In some embodiments, the nitrogen-containing noble metal cap is self-aligned to the embedded conductive material, while in other embodiments some portion of the nitrogen-containing noble metal cap extends onto an upper surface of a diffusion barrier that separates the at least one conductive material from the dielectric material. A method of fabricating such an interconnect structure utilizing a low temperature (about 200° C. or less) chemical deposition process is also provided.

摘要翻译： 提供了一种互连结构，其具有增强的电迁移可靠性，而不降低电路短产量，并且提高了技术可扩展性。 本发明的互连结构包括具有约3.0或更小的介电常数的电介质材料。 电介质材料具有嵌入其中的至少一种导电材料。 主要地（即基本上）位于至少一个导电区域的上表面上的含氮贵金属盖帽。 含氮贵金属盖不延伸到电介质材料的上表面上。 在一些实施方案中，含氮贵金属帽与嵌入的导电材料自对准，而在其它实施方案中，含氮贵金属帽的某些部分延伸到扩散阻挡层的上表面上，所述扩散阻挡层的上表面将至少一个 导电材料。 还提供了利用低温（约200℃或更低）化学沉积工艺制造这种互连结构的方法。

公开(公告)号：US20110100697A1

公开(公告)日：2011-05-05

申请号：US12608377

申请日：2009-10-29

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H05K1/11 ,  H01R43/16

CPC分类号： H01L21/76808 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76835 ,  H01L2221/1036 ,  Y10T29/49204

摘要： An interconnect structure including a lower interconnect level with a first dielectric layer having a first conductive material embedded therein; a dielectric capping layer located on the first dielectric layer and some portions of the first conductive material; an upper interconnect level including a second dielectric layer having at least one via opening filled with a second conductive material and at least one overlying line opening filled with the second conductive material disposed therein, wherein the at least one via opening is in contact with the first conductive material in the lower interconnect level by a via gouging feature; a dielectric liner on sidewalls of the at least one via opening; and a first diffusion barrier layer on sidewalls and a bottom of both the at least one via opening and the at least one overlying line opening. A method of forming the interconnect structure is also provided.

摘要翻译： 一种互连结构，包括具有嵌入其中的第一导电材料的第一介电层的下部互连电平; 位于所述第一电介质层上的电介质覆盖层和所述第一导电材料的一些部分; 上部互连级别，包括具有填充有第二导电材料的至少一个通孔开口的第二介电层和填充有设置在其中的第二导电材料的至少一个覆盖的线路开口，其中所述至少一个通孔与第一导电材料接触 导电材料在下互连级别通过通孔气刨特征; 在所述至少一个通孔开口的侧壁上的电介质衬垫; 以及在所述至少一个通孔开口和所述至少一个覆盖线开口的侧壁和底部上的第一扩散阻挡层。 还提供了形成互连结构的方法。

公开(公告)号：US20110049716A1

公开(公告)日：2011-03-03

申请号：US12553265

申请日：2009-09-03

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H01L23/52 ,  C23C16/46 ,  H01L21/768

CPC分类号： H01L21/76849 ,  C23C16/0272 ,  C23C16/16 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/54 ,  C23C28/00 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76883

摘要： A structure, tool and method for forming in-situ metallic/dielectric caps for interconnects. The method includes forming wire embedded in a dielectric layer on a semiconductor substrate, the wire comprising a copper core and an electrically conductive liner on sidewalls and a bottom of the copper core, a top surface of the wire coplanar with a top surface of the dielectric layer; forming a metal cap on an entire top surface of the copper core; without exposing the substrate to oxygen, forming a dielectric cap over the metal cap, any exposed portions of the liner, and the dielectric layer; and wherein the dielectric cap is an oxygen diffusion barrier and contains no oxygen atoms.

摘要翻译： 用于形成用于互连的原位金属/电介质盖的结构，工具和方法。 该方法包括形成嵌入在半导体衬底上的电介质层中的导线，该导线包括在铜芯的侧壁和底部上的铜芯和导电衬垫，该电线的顶表面与电介质的顶表面共面 层; 在铜芯的整个顶表面上形成金属盖; 在不将基底暴露于氧的情况下，在金属盖上形成电介质盖，衬垫的任何暴露部分和电介质层; 并且其中所述电介质盖是氧扩散阻挡层并且不含氧原子。

公开(公告)号：US20100038782A1

公开(公告)日：2010-02-18

申请号：US12190277

申请日：2008-08-12

申请人： Chih-Chao Yang ,  Chao-Kun Hu

发明人： Chih-Chao Yang ,  Chao-Kun Hu

IPC分类号： H01L21/768 ,  H01L23/52

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is provided that has enhanced electromigration reliability without degrading circuit short yield, and improved technology extendibility. The inventive interconnect structure includes a dielectric material having a dielectric constant of about 3.0 or less. The dielectric material has at least one conductive material embedded therein. A nitrogen-containing noble metal cap is located predominately (i.e., essentially) on an upper surface of the at least one conductive region. The nitrogen-containing noble metal cap does not extend onto an upper surface of the dielectric material. In some embodiments, the nitrogen-containing noble metal cap is self-aligned to the embedded conductive material, while in other embodiments some portion of the nitrogen-containing noble metal cap extends onto an upper surface of a diffusion barrier that separates the at least one conductive material from the dielectric material. A method of fabricating such an interconnect structure utilizing a low temperature (about 200° C. or less) chemical deposition process is also provided.

摘要翻译： 提供了一种互连结构，其具有增强的电迁移可靠性，而不降低电路短产量，并且提高了技术可扩展性。 本发明的互连结构包括具有约3.0或更小的介电常数的电介质材料。 电介质材料具有嵌入其中的至少一种导电材料。 主要地（即基本上）位于至少一个导电区域的上表面上的含氮贵金属盖帽。 含氮贵金属盖不延伸到电介质材料的上表面上。 在一些实施方案中，含氮贵金属帽与嵌入的导电材料自对准，而在其它实施方案中，含氮贵金属帽的某些部分延伸到扩散阻挡层的上表面上，所述扩散阻挡层的上表面将至少一个 导电材料。 还提供了利用低温（约200℃或更低）化学沉积工艺制造这种互连结构的方法。