A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.