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公开(公告)号：US20250006856A1
公开(公告)日：2025-01-02
申请号：US18022336
申请日：2021-08-27
Applicant: IHP GmbH-Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroele
Inventor： Stefan LISCHKE
IPC: H01L31/105 , G02F1/015 , G02F1/025 , H01L31/0224 , H01L31/0232 , H01L31/0328 , H01L31/0352 , H01L31/18
Abstract: A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.
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公开(公告)号：US12166491B2
公开(公告)日：2024-12-10
申请号：US18064588
申请日：2022-12-12
Inventor： Adel Fatemi , Andrea Malignaggi
Abstract: An apparatus and a method for recovering clock and data from a multilevel pulse amplitude modulated signal received as input signal is suggested. The apparatus comprises a phase detector, a low-pass filter, a voltage-controlled oscillator, and a feedback loop forming a CDR loop. The voltage-controlled oscillator outputs a clock signal that is provided to the phase detector. The phase detector receives an MSB signal from a sampler. The apparatus also comprises an interleave circuit configured to receive the input signal and to generate two output signals having a smaller symbol rate than the input signal. The apparatus further comprises a logical gate configured to receive the output signals from the interleave circuit and to generate an enable signal for the phase detector indicating symmetrical transitions in the input signal. Lastly, the apparatus comprises a converter converting the output signals from the interleave circuit into an MSB and an LSB bit stream.
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3.发明公开公开(公告)号：US20240111908A1
公开(公告)日：2024-04-04
申请号：US18476898
申请日：2023-09-28
Applicant: IHP GmbH-Innovations for High Performance Microelectronics/Leibniz-Instit. fur Innovative
Inventor： levgen KABIN , Zoya DYKA , Dan KLANN , Peter LANGENDÖRFER
CPC classification number: G06F21/72 , G06F7/588 , G06F21/602
Abstract: A hardware accelerator is disclosed for performing a computational operation in a cryptographic application comprises one or more addressable computational blocks and a plurality of addressable register blocks. A bus is used for data exchange between the blocks in the form of read-from-bus operations and write-to-bus operations in the course of performing the computational operation. A controller for controlling the data exchange performs a block addressing operation using a respective pre-assigned first address of the blocks for addressing the one or more of the blocks involved in a write-to-bus operation in the data exchange. The controller performs a dummy-addressing selection operation to select one or more of the blocks for a dummy addressing operation and a dummy-addressing operation of the selected one or more of the blocks for dummy-addressing the one or more of the selected blocks in the write-to-bus operation.
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公开(公告)号：US20190068151A1
公开(公告)日：2019-02-28
申请号：US16106108
申请日：2018-08-21
Applicant: IHP GmbH - Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative M
Inventor： Ahmed Awny , Alexey Balashov , Dietmar Kissinger
Abstract: The invention relates to an amplification circuit (100), comprising: a VGA (2), an AGC loop (10) for automatically controlling the gain of the VGA (2), a switching circuit (14) for switching between an AGC mode, in which the gain of the VGA (2) is automatically controlled by an output signal of the AGC loop (10) and a manual gain control, MGC, mode, in which the gain of the VGA (2) can be manually controlled by an input signal, and a read/write circuit (30) with a contact (31) for connection to a peripheral system, wherein the read/write circuit (30) is configured, in the MGC mode, to provide the input signal from the contact (31) via a write-mode path (32) to the VGA (2), and, in the AGC mode, to provide the output signal of the AGC loop (10) via a read-mode path (33) on the contact (31).
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公开(公告)号：US20180372835A1
公开(公告)日：2018-12-27
申请号：US16014100
申请日：2018-06-21
Applicant: IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut fur innovative
Inventor： Vladica Sark , Eckhard Grass , Jesus Gutierrez Teran
CPC classification number: G01S5/14 , G01S1/042 , G01S5/0226 , H04B1/02 , H04L27/00
Abstract: A method and system for oversampling a waveform with variable oversampling factor is suggested. The method and for dynamic selection of the oversampling factor are based on a modified equivalent time sampling approach. Multiple waveforms are transmitted, which are separated by a variable delay. The method permits that a receiver selects a different oversampling factor for the received waveform. As a result the method and system provide for oversampling a waveform with a variable, dynamically selectable oversampling factor.
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Patent Agency Ranking
公开(公告)号：US10015632B2
公开(公告)日：2018-07-03
申请号：US15696506
申请日：2017-09-06
Inventor： Vladica Sark , Eckhard Grass , Jesus Gutierrez Teran
CPC classification number: H04W4/023 , G01S5/009 , G01S5/0226 , G01S5/06 , G01S5/10 , G01S5/14 , G01S13/878 , H04W4/06 , H04W56/001
Abstract: A method of determining a position of at least one transceiver node comprises, anchor node by anchor node, transmitting respective positioning frames suitable for reception by a transceiver node and by the other anchor nodes. The transceiver node receives the positioning frames transmitted by the anchor nodes and ascertains respective times of reception for each. A solver stage determines the coordinates (xs, ys, zs) of the respective transceiver node and the time ts of transmission of the first positioning frame by an anchor node of first rank in the positioning sequence by numerically solving a non-linear system of at least five equations.
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7.发明申请公开(公告)号：US20180024176A1
公开(公告)日：2018-01-25
申请号：US15547353
申请日：2016-01-29
Applicant: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE
Inventor： Chafik MELIANI , Subhajit GUHA , Ibne Jamal Farabi
IPC: G01R27/32
CPC classification number: G01R27/32 , G01N15/1031 , G01N22/00 , G01N33/48728
Abstract: A measuring carrier for position-resolved meteorological determination of a measurement variable dependent on the dielectric permittivity of a device under test. The measuring carrier has a supporting means comprising a measuring surface, to which the device under test can be applied, and a measuring transmission line which entirely or partially forms the measuring surface and comprises a multiplicity of transmission line cells for the purpose of transmitting a radio-frequency measurement signal which can be injected at the input port. The measuring surface is structured in a cellular manner, wherein each of the transmission line cells has a cell-individual propagation constant with respect to the radio-frequency measurement signal in a state free of a device under test. This constant differs from the respective cell-individual constants of the other transmission line cells.
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公开(公告)号：US09640702B2
公开(公告)日：2017-05-02
申请号：US15134784
申请日：2016-04-21
Inventor： Dieter Knoll , Stefan Lischke
IPC: H01L31/02 , H01L31/105 , G02B6/42 , H01L31/0232 , H01L31/0288
CPC classification number: H01L31/105 , G02B6/42 , H01L31/02005 , H01L31/022408 , H01L31/02327 , H01L31/0288
Abstract: A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.
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9.发明申请INDIVIDUALISED VOLTAGE SUPPLY OF INTEGRATED CIRCUITS COMPONENTS AS PROTECTIVE MEANS AGAINST SIDE CHANNEL ATTACKS 有权集成电路组件的单独电压供应作为防范侧面通道攻击的保护措施公开(公告)号：US20150380365A1
公开(公告)日：2015-12-31
申请号：US14438341
申请日：2013-10-25
Applicant: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE
Inventor： Zoya Dyka , Peter Langendorfer
IPC: H01L23/00 , H01L23/522 , H01L23/528 , H01L27/02
CPC classification number: H01L23/573 , H01L23/5226 , H01L23/528 , H01L23/5286 , H01L23/53204 , H01L27/0292 , H01L27/11807 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device, in particular an integrated circuit with protection against side channel attacks, in particular imaging- and probing-based attacks, EMA and reverse engineering, in which a metallic conductive layer of a first (104) and/or a second potential supply line (106) are each connected directly and individually to all the circuit components via respective individual conductor path structures (V1, V2).
Abstract translation: 一种半导体器件，特别是具有防止侧面信道攻击的集成电路，特别是基于成像和探测的攻击，EMA和逆向工程，其中第一（104）和/或第二电位电源的金属导电层 线路（106）各自通过各自的导体路径结构（V1，V2）直接且单独地连接到所有的电路部件。
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公开(公告)号：US20150063382A1
公开(公告)日：2015-03-05
申请号：US14377032
申请日：2013-02-11
Applicant: IHP GmbH - Innovations for High Performance Micro- electronics/Leibniz-Institue Fur Innovative Mikro
Inventor： Giovanni Capellini , Christian Wenger , Thomas Schroder , Grzegorz Kozlowski
CPC classification number: H01S5/3201 , H01L33/34 , H01S5/021 , H01S5/3223
Abstract: A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.
Abstract translation: 一种半导体光发射器件，包括衬底，由锗制成的有源层，其被配置为在施加工作电压的情况下向所述半导体发光器件发光，其中在所述衬底上布置有间隙，所述间隙在两个桥梁之间延伸 有源层被布置在桥梁上并且桥接间隙，并且其中半导体光发射器件包括应力层，其在空隙上方的有源层中引起拉伸应变。
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