- 专利标题: METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT
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申请号: US13888924申请日: 2013-05-07
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公开(公告)号: US20130224950A1公开(公告)日: 2013-08-29
- 发明人: Noel Russell , John J. Hautala , John Gumpher
- 申请人: TEL EPION INC.
- 申请人地址: US MA Billerica
- 专利权人: TEL EPION INC.
- 当前专利权人: TEL EPION INC.
- 当前专利权人地址: US MA Billerica
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
公开/授权文献
- US08703607B2 Method to alter silicide properties using GCIB treatment 公开/授权日:2014-04-22