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    Sidewall spacer patterning method using gas cluster ion beam
    1.
    发明授权
    Sidewall spacer patterning method using gas cluster ion beam 有权
    采用气体簇离子束的侧壁间隔图案化方法

    公开(公告)号：US09500946B2

    公开(公告)日：2016-11-22

    申请号：US14661411

    申请日：2015-03-18

    Applicant: TEL Epion Inc.

    Inventor： Soo Doo Chae ,  Youngdon Chang ,  Il-seok Song ,  Noel Russell

    IPC: H01L21/302 ,  G03F7/00 ,  H01L21/308 ,  C23F4/00

    CPC classification number: G03F7/00 ,  C23F4/00 ,  G03F7/40 ,  H01L21/3086

    Abstract: A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.

    Abstract translation: 描述了用于图案化衬底的方法。 该方法包括接收具有图案化层的衬底，其中图案化层限定第一心轴图案，并且其中第一组合物的第一材料层共形沉积在第一心轴图案上。 该方法还包括使用第一气体簇离子束（GCIB）蚀刻工艺部分地去除第一材料层，以暴露第一心轴图案的顶表面，在邻近第一心轴图案的特征的底部区域处打开第一材料层的一部分 第一心轴图案，并且将第一材料层的剩余部分保持在第一心轴图案的侧壁上; 以及使用一个或多个蚀刻工艺选择性地去除所述第一心轴图案以留下第二心轴图案，所述第二心轴图案包括残留在所述第一心轴图案的侧壁上的所述第一材料层的剩余部分。

    METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM
    2.
    发明申请
    METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM 有权
    使用气体束离子束的表面轮廓校正方法

    公开(公告)号：US20160322266A1

    公开(公告)日：2016-11-03

    申请号：US15142147

    申请日：2016-04-29

    Applicant: TEL Epion Inc.

    Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

    IPC: H01L21/66 ,  H01L21/3105 ,  H01L21/311

    CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

    Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

    Abstract translation: 描述了用于校正衬底上的表面轮廓的方法。 特别地，该方法包括接收具有由第一材料和第二材料构成的非均质层的基底，其中所述异质层具有暴露第一材料和第二材料的初始上表面，并且限定穿过基底的第一表面轮廓 。 该方法还包括设置异质层的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，然后选择性地 去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面，并且限定第二表面轮廓，其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

    HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD
    4.
    发明申请
    HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开

    公开(公告)号：US20190043766A1

    公开(公告)日：2019-02-07

    申请号：US16154025

    申请日：2018-10-08

    Applicant: TEL Epion Inc.

    Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

    IPC: H01L21/66 ,  H01J37/32 ,  G05B19/418 ,  H01L21/3065

    Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

    HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD
    6.
    发明申请
    HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
    混合校正处理系统和方法

    公开(公告)号：US20170053843A1

    公开(公告)日：2017-02-23

    申请号：US15242376

    申请日：2016-08-19

    Applicant: TEL Epion Inc.

    Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

    IPC: H01L21/66 ,  G05B23/02 ,  G05B19/19 ,  G05B19/406 ,  H01J37/32 ,  H01L21/3065

    CPC classification number: H01L22/20 ,  G05B19/41875 ,  G05B2219/32216 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/12 ,  Y02P90/22

    Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

    Abstract translation: 描述用于对工件进行校正处理的系统和方法。 所述系统和方法包括从第一源接收第一组参数数据，所述第一组在诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据 到微电子工件的至少第二部分。 此后，产生校正过程，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。

    Hybrid corrective processing system and method
    8.
    发明授权
    Hybrid corrective processing system and method 有权

    公开(公告)号：US10096527B2

    公开(公告)日：2018-10-09

    申请号：US15242376

    申请日：2016-08-19

    Applicant: TEL Epion Inc.

    Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

    IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  G05B19/418

    Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

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