A multi-trench termination structure for semiconductor device is disclosed, where the semiconductor device includes a semiconductor substrate and an active structure region. The multi-trench termination structure includes multiple trenches defined on an exposed face of the semiconductor substrate, a first mask layer formed on a partial exposed surface of the semiconductor substrate and corresponding to a termination structure region of the semiconductor device, a gate insulation layer formed in the trenches, a conductive layer formed on the gate insulation layer and protruding out of the exposed surface of the semiconductor substrate, and a metal layer formed over the first mask layer and conductive layer on the termination structure region of the semiconductor device.