发明申请
US20130230937A1 METHOD FOR MANUFACTURING PERPENDICULAR LED 审中-公开
制造全能LED的方法

  • 专利标题: METHOD FOR MANUFACTURING PERPENDICULAR LED
  • 专利标题(中): 制造全能LED的方法
  • 申请号: US13988325
    申请日: 2011-05-25
  • 公开(公告)号: US20130230937A1
    公开(公告)日: 2013-09-05
  • 发明人: Hyun-Woo ShinKyo-Sun KuByung-Du Oh
  • 申请人: Hyun-Woo ShinKyo-Sun KuByung-Du Oh
  • 申请人地址: KR Suwon-Si ,Gyeonggi-Do
  • 专利权人: HANBEAM CO., LTD.
  • 当前专利权人: HANBEAM CO., LTD.
  • 当前专利权人地址: KR Suwon-Si ,Gyeonggi-Do
  • 优先权: KR10-2010-0115074 20101118
  • 国际申请: PCT/KR2011/003822 WO 20110525
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00
METHOD FOR MANUFACTURING PERPENDICULAR LED
摘要:
A method for manufacturing a perpendicular LED for preventing bending of a wafer while reducing the time required for manufacturing to improve the mass production yield of perpendicular LEDs includes: growing an LED compound semiconductor structure on a sapphire substrate; forming an adhesive layer which is stacked on the LED compound semiconductor structure in the order of a first solder layer, a heat-emitting layer, and a second solder layer; forming a conductive substrate on the adhesive layer; coupling the first solder layer and the second solder layer by means of the heat which is generated from reacting the heat-emitting layer; and removing the sapphire substrate.
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