发明申请
- 专利标题: METHOD FOR MANUFACTURING PERPENDICULAR LED
- 专利标题(中): 制造全能LED的方法
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申请号: US13988325申请日: 2011-05-25
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公开(公告)号: US20130230937A1公开(公告)日: 2013-09-05
- 发明人: Hyun-Woo Shin , Kyo-Sun Ku , Byung-Du Oh
- 申请人: Hyun-Woo Shin , Kyo-Sun Ku , Byung-Du Oh
- 申请人地址: KR Suwon-Si ,Gyeonggi-Do
- 专利权人: HANBEAM CO., LTD.
- 当前专利权人: HANBEAM CO., LTD.
- 当前专利权人地址: KR Suwon-Si ,Gyeonggi-Do
- 优先权: KR10-2010-0115074 20101118
- 国际申请: PCT/KR2011/003822 WO 20110525
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A method for manufacturing a perpendicular LED for preventing bending of a wafer while reducing the time required for manufacturing to improve the mass production yield of perpendicular LEDs includes: growing an LED compound semiconductor structure on a sapphire substrate; forming an adhesive layer which is stacked on the LED compound semiconductor structure in the order of a first solder layer, a heat-emitting layer, and a second solder layer; forming a conductive substrate on the adhesive layer; coupling the first solder layer and the second solder layer by means of the heat which is generated from reacting the heat-emitting layer; and removing the sapphire substrate.