METHOD FOR MANUFACTURING PERPENDICULAR LED
    1.
    发明申请
    METHOD FOR MANUFACTURING PERPENDICULAR LED 审中-公开
    制造全能LED的方法

    公开(公告)号:US20130230937A1

    公开(公告)日:2013-09-05

    申请号:US13988325

    申请日:2011-05-25

    IPC分类号: H01L33/00

    CPC分类号: H01L33/005 H01L33/0079

    摘要: A method for manufacturing a perpendicular LED for preventing bending of a wafer while reducing the time required for manufacturing to improve the mass production yield of perpendicular LEDs includes: growing an LED compound semiconductor structure on a sapphire substrate; forming an adhesive layer which is stacked on the LED compound semiconductor structure in the order of a first solder layer, a heat-emitting layer, and a second solder layer; forming a conductive substrate on the adhesive layer; coupling the first solder layer and the second solder layer by means of the heat which is generated from reacting the heat-emitting layer; and removing the sapphire substrate.

    摘要翻译: 一种用于制造用于防止晶片弯曲的垂直LED的方法,同时减少制造所需的时间以提高垂直LED的批量生产成本,包括:在蓝宝石衬底上生长LED化合物半导体结构; 以第一焊料层,发热层和第二焊料层的顺序形成层叠在LED化合物半导体结构上的粘合层; 在所述粘合剂层上形成导电基板; 通过由发热层反应而产生的热耦合第一焊料层和第二焊料层; 并去除蓝宝石衬底。

    THIN GALLIUM NITRIDE LIGHT EMITTING DIODE DEVICE
    2.
    发明申请
    THIN GALLIUM NITRIDE LIGHT EMITTING DIODE DEVICE 审中-公开
    薄硝酸钠发光二极管器件

    公开(公告)号:US20090315069A1

    公开(公告)日:2009-12-24

    申请号:US12550057

    申请日:2009-08-28

    IPC分类号: H01L33/00

    摘要: Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system.

    摘要翻译: 公开了一种发光二极管(LED)装置,其包括蓝宝石无基板氮化镓(GaN)LED的晶体结构,其中晶体结构以单元形式安装在子安装基板的第一表面上 芯片,并且子安装基板的第一表面具有大于单元芯片接合的区域的表面积的表面积。 还公开了用于制造LED器件的预制件和用于制造LED器件的方法。 发光二极管的晶体结构在其上生长的蓝宝石衬底在去除之前被处理成单位芯片。 因此,可以防止在去除蓝宝石衬底期间可能发生的发光二极管的晶体结构中的任何裂纹。 因此,可以在批量生产系统中制造薄型发光二极管装置。

    Squid sensor using auxiliary sensor
    3.
    发明授权
    Squid sensor using auxiliary sensor 有权
    鱿鱼传感器采用辅助传感器

    公开(公告)号:US07091717B2

    公开(公告)日:2006-08-15

    申请号:US10692694

    申请日:2003-10-27

    IPC分类号: G01R33/35 G01R33/25

    CPC分类号: G01R33/0356

    摘要: A SQUID (Superconducting QUantum Interference Device) sensor using an auxiliary sensor, includes a SQUID sensing unit having a SQUID and a first feedback coil for creating a magnetic field at a periphery of the SQUID; an auxiliary sensor having a lower magnetic sensitivity and a higher operation range than the SQUID sensing unit; and a sensor reading unit for operating the SQUID sensing unit and the auxiliary sensor to read out a signal of the SQUID and at the same time, supplying the SQUID sensing unit with an offset magnetic field through the first feedback coil.

    摘要翻译: 使用辅助传感器的SQUID(超导量子干涉仪)传感器包括具有SQUID的SQUID感测单元和用于在SQUID的外围产生磁场的第一反馈线圈; 辅助传感器,其具有比SQUID感测单元更低的灵敏度和更高的操作范围; 以及传感器读取单元,用于操作SQUID感测单元和辅助传感器以读出SQUID的信号,并且同时向SQUID感测单元提供穿过第一反馈线圈的偏移磁场。

    Apparatus and method for measuring second-order gradient of magnetic field using super conductor quantum interference device
    4.
    发明授权
    Apparatus and method for measuring second-order gradient of magnetic field using super conductor quantum interference device 有权
    使用超导体量子干涉装置测量磁场二阶梯度的装置和方法

    公开(公告)号:US06337567B1

    公开(公告)日:2002-01-08

    申请号:US09563720

    申请日:2000-05-03

    IPC分类号: G01R33022

    CPC分类号: G01R33/0356 Y10S505/846

    摘要: An apparatus and method for measuring a second-order gradient of a magnetic field using a super conductor quantum interference device (SQUID) which obtains the second-order gradient of the magnetic field with a simple-constructed and low-priced measuring apparatus having three SQUID sensors and one differential circuit only. The apparatus includes first to third SQUID sensor driving circuits for detecting respective surrounding magnetic fields and outputting corresponding currents, respectively, a first coil for producing a magnetic field according to the current outputted from the first SQUID sensor driving circuit and feeding the produced magnetic field back to the first SQUID sensor driving circuit, a second coil for producing a magnetic field according to a sum of the currents outputted from the first and second SQUID sensor driving circuits and feeding the produced magnetic field back to the second SQUID sensor driving circuit, a third coil for producing a magnetic field according to a sum of the currents outputted from the second and third SQUID sensor driving circuits and feeding the produced magnetic field back to the third SQUID sensor driving circuit, and a differential amplifying section for differential-amplifying voltages outputted from the second and third SQUID sensor driving circuits.

    摘要翻译: 一种使用超导体量子干涉装置(SQUID)测量磁场的二阶梯度的装置和方法,该超导体量子干涉装置利用具有三个SQUID的简单构造和低价的测量装置获得磁场的二阶梯度 传感器和一个差分电路。 该装置包括第一至第三SQUID传感器驱动电路,用于分别检测相应的周围磁场并输出相应的电流;第一线圈,用于根据从第一SQUID传感器驱动电路输出的电流产生磁场,并将产生的磁场送回 到第一SQUID传感器驱动电路,第二线圈,用于根据从第一和第二SQUID传感器驱动电路输出的电流的总和产生磁场,并将产生的磁场馈送回第二SQUID传感器驱动电路;第三线圈, 线圈,用于根据从第二和第三SQUID传感器驱动电路输出的电流的总和产生磁场,并将产生的磁场馈送回第三SQUID传感器驱动电路;以及差分放大部分,用于从 第二和第三SQUID传感器驱动电路。