公开(公告)号：US20130230937A1

公开(公告)日：2013-09-05

申请号：US13988325

申请日：2011-05-25

申请人： Hyun-Woo Shin ,  Kyo-Sun Ku ,  Byung-Du Oh

发明人： Hyun-Woo Shin ,  Kyo-Sun Ku ,  Byung-Du Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/005 ,  H01L33/0079

摘要： A method for manufacturing a perpendicular LED for preventing bending of a wafer while reducing the time required for manufacturing to improve the mass production yield of perpendicular LEDs includes: growing an LED compound semiconductor structure on a sapphire substrate; forming an adhesive layer which is stacked on the LED compound semiconductor structure in the order of a first solder layer, a heat-emitting layer, and a second solder layer; forming a conductive substrate on the adhesive layer; coupling the first solder layer and the second solder layer by means of the heat which is generated from reacting the heat-emitting layer; and removing the sapphire substrate.

摘要翻译： 一种用于制造用于防止晶片弯曲的垂直LED的方法，同时减少制造所需的时间以提高垂直LED的批量生产成本，包括：在蓝宝石衬底上生长LED化合物半导体结构; 以第一焊料层，发热层和第二焊料层的顺序形成层叠在LED化合物半导体结构上的粘合层; 在所述粘合剂层上形成导电基板; 通过由发热层反应而产生的热耦合第一焊料层和第二焊料层; 并去除蓝宝石衬底。