Invention Application
- Patent Title: METHOD OF FORMING A GERMANIUM THIN FILM
- Patent Title (中): 形成薄膜的方法
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Application No.: US13780842Application Date: 2013-02-28
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Publication No.: US20130230975A1Publication Date: 2013-09-05
- Inventor: Akinobu KAKIMOTO , Shigeru NAKAJIMA , Kazuhide HASEBE
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-46829 20120302
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.
Public/Granted literature
- US08815714B2 Method of forming a germanium thin film Public/Granted day:2014-08-26
Information query
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