中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

34 records (took 0.025 seconds)

    FILM-FORMING PROCESSING APPARATUS, FILM-FORMING METHOD, AND STORAGE MEDIUM
    2.
    发明申请
    FILM-FORMING PROCESSING APPARATUS, FILM-FORMING METHOD, AND STORAGE MEDIUM 审中-公开
    成膜加工设备，成膜方法和储存介质

    公开(公告)号：US20170009345A1

    公开(公告)日：2017-01-12

    申请号：US15200258

    申请日：2016-07-01

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hitoshi KATO ,  Kazuhide HASEBE

    IPC: C23C16/46 ,  C23C16/455

    CPC classification number: C23C16/46 ,  C23C16/45551

    Abstract: A film-forming processing apparatus includes a first heater heating an entire heat treatment region of a substrate, a second heater heating the substrate to have an in-plane temperature distribution having a concentric shape, a gas supplier supplying a process gas to a rotary table; and a control part outputting a control signal for executing a first step of setting a rotation position of the rotary table such that the substrate on the rotary table is placed in a position corresponding to the second heater and forming the in-plane temperature distribution having the concentric shape on the substrate by heating the substrate by the second heater, and a second step of performing a film forming process on the substrate by rotating the rotary table in a state where a heating energy received by the substrate from the second heater is smaller than that in the first step.

    Abstract translation: 一种成膜处理设备包括：加热基板的整个热处理区域的第一加热器;加热该基板以具有同心形状的面内温度分布的第二加热器;向旋转台供应处理气体的供气供应器 ; 以及控制部分，输出用于执行设置旋转台的旋转位置的第一步骤的控制信号，使得旋转台上的基板被放置在与第二加热器相对应的位置，并形成具有 通过第二加热器加热衬底而在衬底上形成同心形状;以及第二步骤，在基板从第二加热器接收的加热能量小于的状态下旋转旋转工作台，在衬底上进行成膜处理 在第一步。

    Plasma Processing Apparatus
    3.
    发明申请
    Plasma Processing Apparatus 有权
    等离子体处理装置

    公开(公告)号：US20150107517A1

    公开(公告)日：2015-04-23

    申请号：US14518151

    申请日：2014-10-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kazuhide HASEBE ,  Jun OGAWA ,  Akira SHIMIZU

    IPC: C23C16/455 ,  C23C16/509

    CPC classification number: C23C16/45582 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568

    Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

    Abstract translation: 一种等离子体处理装置包括：等离子体生成室，其中产生等离子体活性物质;处理室，被配置为容纳沿垂直方向堆叠的处理目标物体;等离子体产生室中产生的等离子体活性物质被供给到处理室; 等离子体源气体供给管，其设置在等离子体产生室的内部并沿垂直方向延伸，等离子体源气体从等离子体源气体供给管的一端引入，并通过形成在等离子体源气体供给管中的气体排出孔排出 以及一对等离子体电极，被配置为对排放到等离子体产生室中的等离子体源气体施加电场。 放置在一对等离子体电极之间的放电区域的尺寸在垂直方向上变化。

    APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM
    4.
    发明申请
    APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM 有权
    形成含硅薄膜的装置

    公开(公告)号：US20150101532A1

    公开(公告)日：2015-04-16

    申请号：US14576410

    申请日：2014-12-19

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mitsuhiro OKADA ,  Akinobu KAKIMOTO ,  Kazuhide HASEBE

    IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46

    CPC classification number: C23C16/52 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

    Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

    Abstract translation: 提供了一种用于形成含硅薄膜的装置，该装置包括控制器，该控制器被配置为控制处理气体供给机构，加热装置和排气器，以执行：通过吸附在基底上形成第一种子层 使用基于氨基硅烷的气体在基体上的氨基硅烷系气体中含有最少的硅; 通过使用具有等于或高于乙硅烷的数量级的高级硅烷系气体中至少含有硅，通过使用具有以下顺序的高级硅烷系气体，形成第一籽晶层上的第二晶种层： 等于或高于所述乙硅烷，其中所述第一种子层和所述第二种子层形成双种子层; 并在双种子层上形成含硅薄膜。

    METHOD AND APPARATUS OF FORMING SILICON NITRIDE FILM
    8.
    发明申请
    METHOD AND APPARATUS OF FORMING SILICON NITRIDE FILM 有权
    形成硅氮化硅膜的方法和装置

    公开(公告)号：US20160108519A1

    公开(公告)日：2016-04-21

    申请号：US14984139

    申请日：2015-12-30

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Akinobu KAKIMOTO ,  Kazuhide HASEBE

    IPC: C23C16/34 ,  C23C16/455 ,  C23C16/46

    CPC classification number: C23C16/345 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    Abstract: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

    Abstract translation: 提供了在目标物体的被处理表面上形成氮化硅膜的方法，该方法包括：重复第一次处理第一预定次数，该过程包括向表面提供含有硅的硅源气体 处理并供给包含用于加速硅源气体朝向待处理表面的分解的材料的分解促进气体; 进行向待处理表面供给氮的氮化气体的第二处理次数的第二处理。 并且执行一个周期第三预定次数，所述一个周期是包括重复第一处理和执行第二处理以在待处理表面上形成氮化硅膜的序列。

    THIN FILM FORMATION METHOD
    9.
    发明申请
    THIN FILM FORMATION METHOD 有权
    薄膜形成方法

    公开(公告)号：US20140206180A1

    公开(公告)日：2014-07-24

    申请号：US14193277

    申请日：2014-02-28

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kazuhide HASEBE ,  Akinobu KAKIMOTO

    IPC: H01L21/02

    CPC classification number: H01L21/02636 ,  C23C16/22 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/481 ,  H01L21/02425 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262

    Abstract: A thin film formation method to form an amorphous silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes supplying a silane-based gas composed of silicon and hydrogen into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object without supplying an impurity-containing gas, supplying the impurity-containing gas into the process chamber to form the amorphous silicon film containing the impurity without supplying the silane-based gas, and performing the supplying of the silane-based gas and the supplying of the impurity-containing gas alternately and repeatedly such that the impurity reacts with the silane-based gas.

    Abstract translation: 在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的非晶硅膜的薄膜形成方法包括以下状态向处理室供给由硅和氢组成的硅烷系气体 硅烷系气体不含有杂质的气体吸附到物体表面上，将含杂质的气体供给到处理室中，以形成含有杂质的非晶硅膜，而不供给硅烷系气体， 进行硅烷类气体的供给和交替重复地供给含杂质气体，使得杂质与硅烷系气体反应。

Patent Agency Ranking