发明申请
US20130233378A1 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS
审中-公开
高效光伏反接触太阳能电池结构和使用半导体波形的制造方法
- 专利标题： HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS
- 专利标题（中）： 高效光伏反接触太阳能电池结构和使用半导体波形的制造方法
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申请号： US13057115申请日： 2010-12-09
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公开(公告)号： US20130233378A1公开(公告)日： 2013-09-12
- 发明人: Mehrdad M Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean Seutter , Virenda V Rana , Anthony Calcaterra , Emmanuel Van Kerschaver , Duncan Harwood , Majid Mansoori , Michael Wingert
- 申请人： Mehrdad M Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean Seutter , Virenda V Rana , Anthony Calcaterra , Emmanuel Van Kerschaver , Duncan Harwood , Majid Mansoori , Michael Wingert
- 申请人地址： US CA Milpitas
- 专利权人： SOLEXEL, INC.
- 当前专利权人： SOLEXEL, INC.
- 当前专利权人地址： US CA Milpitas
- 国际申请： PCT/US10/59783 WO 20101209
- 主分类号： H01L31/02
- IPC分类号： H01L31/02
摘要：
A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing frontside surface, and a doped backside emitter region. A frontside and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
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