- 专利标题: Contact Test Structure and Method
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申请号: US13422846申请日: 2012-03-16
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公开(公告)号: US20130240883A1公开(公告)日: 2013-09-19
- 发明人: Jie Chen , Hsien-Wei Chen , Tsung-Yuan Yu , Ying-Ju Chen
- 申请人: Jie Chen , Hsien-Wei Chen , Tsung-Yuan Yu , Ying-Ju Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/768
摘要:
A system and method for testing electrical connections is provided. In an embodiment one or more floating pads may be manufactured in electrical connection with an underbump metallization structure. A test may then be performed to measure the electrical characteristics of the underbump metallization structure through the floating pad in order to test for defects. Alternatively, a conductive connection may be formed on the underbump metallization and the test may be performed on the conductive connection and the underbump metallization together.
公开/授权文献
- US09129816B2 Contact test structure and method 公开/授权日:2015-09-08