发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- 专利标题（中）： 半导体结构及其形成方法
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申请号： US13521051申请日： 2012-05-29
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公开(公告)号： US20130240958A1公开(公告)日： 2013-09-19
- 发明人: Jing Wang , Lei Guo , Wei Wang
- 申请人： Jing Wang , Lei Guo , Wei Wang
- 优先权： CN201210065893.9 20120313; CN201210161250.4 20120522
- 国际申请： PCT/CN12/76240 WO 20120529
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; an active region formed in the semiconductor substrate, in which the active region comprises: a channel region, and a source region and a drain region formed on both sides of the channel region respectively; and a first isolation trench formed in the semiconductor substrate and on both sides of the active region, in which a first rare earth oxide layer is formed in each first isolation trench to produce a stress in the channel region in a channel length direction.
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