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公开(公告)号：US20130320413A1
公开(公告)日：2013-12-05
申请号：US13576934
申请日：2012-07-18
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/78603 , H01L29/7849 , H01L29/78654 , H01L29/78681 , H01L29/78684
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a trench formed in the semiconductor substrate, in which a rare earth oxide layer is formed in the trench; a channel region partly or entirely formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region, respectively. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底中的沟槽，其中在沟槽中形成稀土氧化物层; 部分或全部形成在稀土氧化物层上的沟道区; 以及分别形成在沟道区两侧的源区和漏区。 稀土氧化物层的晶格常数a与沟道区域和/或源极区域和漏极区域的半导体材料的晶格常数b之间的关系为a =（n±c）b，其中n为 整数，c是晶格常数的失配比，0
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2.发明申请LOW SCHOTTKY BARRIER SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开低肖特基二极管半导体结构及其形成方法公开(公告)号：US20120025279A1
公开(公告)日：2012-02-02
申请号：US13132760
申请日：2011-05-10
IPC分类号： H01L29/812 , H01L21/338
CPC分类号： H01L29/66636 , H01L29/0895 , H01L29/1054 , H01L29/41783 , H01L29/517 , H01L29/66477 , H01L29/66643 , H01L29/78 , H01L29/7839
摘要： A low Schottky barrier semiconductor structure is provided, comprising: a substrate; a SiGe layer with low Ge content formed on the substrate; a channel layer with high Ge content formed on the SiGe layer; a gate stack formed on the substrate and a side wall of one or more layers formed on both sides of the gate stack; a metal source and a metal drain formed in the channel layer and on the both sides of the gate stack respectively; and an insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively.
摘要翻译： 提供了一种低肖特基势垒半导体结构，包括：衬底; 在基板上形成具有低Ge含量的SiGe层; 在SiGe层上形成具有高Ge含量的沟道层; 形成在所述基板上的栅极叠层和形成在所述栅极堆叠的两侧上的一个或多个层的侧壁; 金属源和金属漏极分别形成在沟道层中和栅极堆叠的两侧; 以及分别形成在基板和金属源之间以及基板和金属引线之间的绝缘层。
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公开(公告)号：US20130320446A1
公开(公告)日：2013-12-05
申请号：US13576933
申请日：2012-07-18
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/02521 , H01L21/0237 , H01L21/02488 , H01L29/045 , H01L29/7849 , H01L29/78603
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a rare earth oxide layer formed on the semiconductor substrate; a channel region formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region respectively, in which a relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底上的稀土氧化物层; 形成在稀土氧化物层上的沟道区; 以及源极区域和漏极区域，分别形成在沟道区域的两侧，其中稀土氧化物层的晶格常数a与沟道区域的半导体材料的晶格常数b之间的关系和/或 源极区和漏极区是a =（n±c）b，其中n是整数，c是晶格常数的失配比，0
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公开(公告)号：US08546857B1
公开(公告)日：2013-10-01
申请号：US13576937
申请日：2012-07-16
IPC分类号： H01L29/08 , H01L29/417 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0653 , H01L29/66636 , H01L29/7848
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a source region and a drain region defined in the semiconductor substrate respectively, and a trench formed in the source region and/or the drain region, in which a rare earth oxide layer is formed in the trench; a source and/or a drain formed on the rare earth oxide layer; and a channel region formed between the source and the drain. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the source and/or the drain and/or the channel region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 限定在半导体衬底中的源极区和漏极区，以及在沟道中形成有稀土氧化物层的源极区和/或漏极区中形成的沟槽; 在稀土氧化物层上形成的源极和/或漏极; 以及形成在源极和漏极之间的沟道区域。 源极和/或漏极和/或沟道区的半导体材料的稀土氧化物层的晶格常数a与晶格常数b之间的关系为a =（n±c）b，其中n为 整数，c是晶格常数的失配比，0
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公开(公告)号：US20130240958A1
公开(公告)日：2013-09-19
申请号：US13521051
申请日：2012-05-29
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76283 , H01L29/7846
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; an active region formed in the semiconductor substrate, in which the active region comprises: a channel region, and a source region and a drain region formed on both sides of the channel region respectively; and a first isolation trench formed in the semiconductor substrate and on both sides of the active region, in which a first rare earth oxide layer is formed in each first isolation trench to produce a stress in the channel region in a channel length direction.
摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在所述半导体衬底中的有源区，其中所述有源区包括：沟道区，以及分别形成在所述沟道区两侧的源区和漏区; 以及形成在所述半导体衬底中并且在所述有源区的两侧上形成的第一隔离沟槽，其中在每个第一隔离沟槽中形成第一稀土氧化物层，以在沟道长度方向上的沟道区域中产生应力。
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公开(公告)号：US08890209B2
公开(公告)日：2014-11-18
申请号：US13263227
申请日：2011-08-25
IPC分类号： H01L21/48 , H01L29/786 , H01L29/78
CPC分类号： H01L29/78684 , H01L29/7843 , H01L29/7846 , H01L29/7848 , H01L29/78603 , H01L29/78618
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a SiN stress cap layer covering the gate stack to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译： 提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层，形成在栅叠层下方的沟道区，以及形成在沟道区的侧面上的源极和漏极; 以及覆盖栅极堆叠以在沟道区域中产生应变的SiN应力覆盖层。 此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。
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公开(公告)号：US08796081B2
公开(公告)日：2014-08-05
申请号：US13499498
申请日：2011-09-07
IPC分类号： H01L21/338 , H01L31/00
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L29/1054
摘要： A semiconductor structure is provided, comprising: a Si substrate; a porous structure layer formed on the Si substrate, in which the porous structure layer has a flat surface and comprises a Si1-xGex layer with low Ge content; and a Ge-containing layer formed on the porous structure layer, in which the Ge containing layer comprises a Ge layer or a Si1-yGey layer with high Ge content and x≦y. Further, a method for forming the semiconductor structure is also provided.
摘要翻译： 提供一种半导体结构，包括：Si衬底; 形成在Si基板上的多孔结构层，其中多孔结构层具有平坦表面并且包括具有低Ge含量的Si 1-x Ge x层; 以及形成在多孔结构层上的含Ge层，其中Ge含量层包括Ge层或具有高Ge含量的Si1-yGey层和x
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公开(公告)号：US20120305986A1
公开(公告)日：2012-12-06
申请号：US13376442
申请日：2011-11-11
IPC分类号： H01L29/16 , H01L21/336
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02494 , H01L21/02502 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/30608 , H01L21/3065 , H01L29/66651 , H01L29/78
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a wafer; a plurality of convex structures formed on the wafer, in which every two adjacent convex structures are separated by a cavity in a predetermined pattern and arranged in an array, and the cavity between every two adjacent convex structures is less than 50 nm in width; and a first semiconductor film formed on the plurality of convex structures, in which a part of the first semiconductor film is spaced apart from the wafer.
摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括晶片; 形成在晶片上的多个凸起结构，其中每两个相邻的凸起结构以预定图案以空腔分隔并排列成阵列，并且每两个相邻的凸结构之间的空腔的宽度小于50nm; 以及形成在所述多个凸起结构上的第一半导体膜，其中所述第一半导体膜的一部分与所述晶片间隔开。
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9.发明申请METHOD FOR FORMING STRAINED LAYER WITH HIGH GE CONTENT ON SUBSTRATE AND SEMICONDUCTOR STRUCTURE 有权在基板和半导体结构上形成具有高GE含量的应变层的方法公开(公告)号：US20120007146A1
公开(公告)日：2012-01-12
申请号：US13126730
申请日：2010-11-29
IPC分类号： H01L29/78 , H01L21/20 , H01L21/265
CPC分类号： H01L21/76254 , H01L29/1054 , H01L29/78684 , H01L29/78687
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure may comprise a substrate (110); an insulation layer (120) formed on the substrate (110); a strained layer (130) formed on the insulation layer (120); a strained layer (140) with high Ge content formed on the strained layer (130); and a gate stack (160) formed on the strained layer (140) with high Ge content.
摘要翻译： 提供半导体结构及其形成方法。 半导体结构可以包括衬底（110）; 形成在所述基板（110）上的绝缘层（120）; 形成在绝缘层（120）上的应变层（130）; 在应变层（130）上形成具有高Ge含量的应变层（140）; 以及形成在具有高Ge含量的应变层（140）上的栅极堆叠（160）。
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公开(公告)号：US08786017B2
公开(公告)日：2014-07-22
申请号：US13263222
申请日：2011-08-25
IPC分类号： H01L27/12
CPC分类号： H01L29/78684 , H01L29/7846
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译： 提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层，形成在栅叠层下方的沟道区，以及形成在沟道区的侧面上的源极和漏极; 以及延伸到硅衬底中并填充有绝缘电介质材料以在沟道区域中产生应变的多个浅沟槽隔离结构。 此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。
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