发明申请
- 专利标题： Inductor for Post Passivation Interconnect
- 专利标题（中）： 后钝化互感器电感
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申请号： US13419272申请日： 2012-03-13
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公开(公告)号： US20130241683A1公开(公告)日： 2013-09-19
- 发明人: Hao-Yi Tsai , Hsien-Wei Chen , Hung-Yi Kuo , Jie Chen , Ying-Ju Chen , Tsung-Yuan Yu
- 申请人： Hao-Yi Tsai , Hsien-Wei Chen , Hung-Yi Kuo , Jie Chen , Ying-Ju Chen , Tsung-Yuan Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01F5/00
- IPC分类号： H01F5/00 ; H01F41/02
摘要：
An inductor device and method of forming the inductor device are provided. In some embodiments the inductor device includes a post passivation interconnect (PPI) layer disposed and an under bump metallization (UBM) layer, each disposed over a substrate. The PPI layer forms a coil and dummy pads. The dummy pads are disposed around a substantial portion of the coil to shield the coil from electromagnetic interference. A first portion of the UBM layer is electrically coupled to the coil and configured to interface with an electrical coupling member.
公开/授权文献
- US09000876B2 Inductor for post passivation interconnect 公开/授权日：2015-04-07