发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13619336申请日： 2012-09-14
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公开(公告)号： US20130248998A1公开(公告)日： 2013-09-26
- 发明人: Shinichiro Misu , Tsuyoshi Ota , Tatsuya Nishiwaki , Takeshi Uchihara , Yusuke Kawaguchi
- 申请人： Shinichiro Misu , Tsuyoshi Ota , Tatsuya Nishiwaki , Takeshi Uchihara , Yusuke Kawaguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-068433 20120323
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
According to one embodiment, a semiconductor device includes, a drain, source, base and drift regions, a gate electrode, a gate insulating film, a first semiconductor region, a drain electrode, and a source electrode. The drain region has a first portion, and a second portion having a surface extending in a first direction which is vertical to a main surface of the first portion. The source region extends in a second direction which is parallel to the second portion, and is provided to be spaced from the drain region. The gate electrode extends in the first direction and a third direction which is vertical to the first direction and the second direction, and passes through the base region in the third direction. The first semiconductor region is provided between the gate insulating film and the drain region, and has a lower impurity concentration than the drift region.
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