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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20130248998A1

    公开(公告)日：2013-09-26

    申请号：US13619336

    申请日：2012-09-14

    申请人： Shinichiro Misu ,  Tsuyoshi Ota ,  Tatsuya Nishiwaki ,  Takeshi Uchihara ,  Yusuke Kawaguchi

    发明人： Shinichiro Misu ,  Tsuyoshi Ota ,  Tatsuya Nishiwaki ,  Takeshi Uchihara ,  Yusuke Kawaguchi

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7801 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66704 ,  H01L29/66734 ,  H01L29/66787 ,  H01L29/7813 ,  H01L29/7825 ,  H01L29/872

    摘要： According to one embodiment, a semiconductor device includes, a drain, source, base and drift regions, a gate electrode, a gate insulating film, a first semiconductor region, a drain electrode, and a source electrode. The drain region has a first portion, and a second portion having a surface extending in a first direction which is vertical to a main surface of the first portion. The source region extends in a second direction which is parallel to the second portion, and is provided to be spaced from the drain region. The gate electrode extends in the first direction and a third direction which is vertical to the first direction and the second direction, and passes through the base region in the third direction. The first semiconductor region is provided between the gate insulating film and the drain region, and has a lower impurity concentration than the drift region.

    摘要翻译： 根据一个实施例，半导体器件包括漏极，源极，基极和漂移区，栅电极，栅绝缘膜，第一半导体区，漏电极和源电极。 漏区具有第一部分，第二部分具有沿垂直于第一部分的主表面的第一方向延伸的表面。 源极区域在与第二部分平行的第二方向上延伸，并且设置成与漏极区域间隔开。 栅极电极在第一方向和与第一方向和第二方向垂直的第三方向上延伸，并且在第三方向上穿过基极区域。 第一半导体区域设置在栅极绝缘膜和漏极区之间，并且具有比漂移区更低的杂质浓度。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08008715B2

    公开(公告)日：2011-08-30

    申请号：US12185630

    申请日：2008-08-04

    申请人： Yusuke Kawaguchi ,  Kazuya Nakayama ,  Tsuyoshi Ohta ,  Takeshi Uchihara ,  Takahiro Kawano ,  Yuji Kato

    发明人： Yusuke Kawaguchi ,  Kazuya Nakayama ,  Tsuyoshi Ohta ,  Takeshi Uchihara ,  Takahiro Kawano ,  Yuji Kato

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7811

    摘要： There is provided a semiconductor device comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer of the first conductivity type; a semiconductor region of the first conductivity type selectively provided on a front surface portion of the second semiconductor layer of the second conductivity type; a first main electrode provided in contact with a surface of the semiconductor region; a second main electrode provided on a side of the first semiconductor layer of the first conductivity type, the side being opposite to the surface on which the second semiconductor layer of the second conductivity type is provided; a gate wiring provided on the second semiconductor layer of the second conductivity type around an element region in which the semiconductor region is provided; a trench penetrating the second semiconductor layer of the second conductivity type to reach the first semiconductor layer of the first conductivity type, and also extending under the element region and the gate wiring; a gate electrode provided inside the trench in the element region with a gate insulating film interposed in between; and a gate electrode lead portion provided inside the trench under the gate wiring with the gate insulating film interposed in between, and contacting the gate wiring and the gate electrode.

    摘要翻译： 提供一种半导体器件，包括：第一导电类型的第一半导体层; 设置在第一导电类型的第一半导体层上的第二导电类型的第二半导体层; 选择性地设置在第二导电类型的第二半导体层的前表面部分上的第一导电类型的半导体区域; 设置成与半导体区域的表面接触的第一主电极; 设置在第一导电类型的第一半导体层的一侧的第二主电极，与设置有第二导电类型的第二半导体层的表面相对的一侧; 围绕设置有半导体区域的元件区域设置在第二导电类型的第二半导体层上的栅极布线; 穿过第二导电类型的第二半导体层的沟槽到达第一导电类型的第一半导体层，并且还在元件区域和栅极布线之下延伸; 设置在所述元件区域的所述沟槽内部的栅电极，其间插入有栅极绝缘膜; 以及栅极引线部分，其设置在栅极布线下方的沟槽内部，栅极绝缘膜介于其间并与栅极布线和栅电极接触。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08482060B2

    公开(公告)日：2013-07-09

    申请号：US13052917

    申请日：2011-03-21

    申请人： Takeshi Uchihara ,  Yusuke Kawaguchi ,  Keiko Kawamura ,  Hitoshi Shinohara ,  Yosefu Fujiki

    发明人： Takeshi Uchihara ,  Yusuke Kawaguchi ,  Keiko Kawamura ,  Hitoshi Shinohara ,  Yosefu Fujiki

    IPC分类号： H01L29/772

    CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0626 ,  H01L29/0696 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7808

    摘要： According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的漂移区域，第二导电类型的基极区域，第一导电类型的源极区域，沟槽形状的栅电极，第二导电类型的接触区域 导电类型，漏电极和源电极。 漂移区选择性地设置在第一导电类型的漏极层中，从漏极层的表面到漏极层的内部。 基极区域选择性地设置在漂移区域中，从漂移区域的表面到漂移区域的内部。 源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。 栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域，以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。 接触区选择性地设置在漂移区的表面上。 接触区域含有浓度高于碱性区域的杂质浓度的杂质。 漏电极连接到漏极层。 源电极连接到源极区域和接触区域。 接触区域从漏极层的侧面朝向漂移区域延伸，并且不接触漏极层。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090032875A1

    公开(公告)日：2009-02-05

    申请号：US12185630

    申请日：2008-08-04

    申请人： Yusuke KAWAGUCHI ,  Kazuya Nakayama ,  Tsuyoshi Ohta ,  Takeshi Uchihara ,  Takahiro Kawano ,  Yuji Kato

    发明人： Yusuke KAWAGUCHI ,  Kazuya Nakayama ,  Tsuyoshi Ohta ,  Takeshi Uchihara ,  Takahiro Kawano ,  Yuji Kato

    IPC分类号： H01L29/00

    CPC分类号： H01L29/7813 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7811

    摘要： There is provided a semiconductor device comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer of the first conductivity type; a semiconductor region of the first conductivity type selectively provided on a front surface portion of the second semiconductor layer of the second conductivity type; a first main electrode provided in contact with a surface of the semiconductor region; a second main electrode provided on a side of the first semiconductor layer of the first conductivity type, the side being opposite to the surface on which the second semiconductor layer of the second conductivity type is provided; a gate wiring provided on the second semiconductor layer of the second conductivity type around an element region in which the semiconductor region is provided; a trench penetrating the second semiconductor layer of the second conductivity type to reach the first semiconductor layer of the first conductivity type, and also extending under the element region and the gate wiring; a gate electrode provided inside the trench in the element region with a gate insulating film interposed in between; and a gate electrode lead portion provided inside the trench under the gate wiring with the gate insulating film interposed in between, and contacting the gate wiring and the gate electrode.

    摘要翻译： 提供一种半导体器件，包括：第一导电类型的第一半导体层; 设置在第一导电类型的第一半导体层上的第二导电类型的第二半导体层; 选择性地设置在第二导电类型的第二半导体层的前表面部分上的第一导电类型的半导体区域; 设置成与所述半导体区域的表面接触的第一主电极; 设置在第一导电类型的第一半导体层的一侧的第二主电极，与设置有第二导电类型的第二半导体层的表面相对的一侧; 围绕设置有半导体区域的元件区域设置在第二导电类型的第二半导体层上的栅极布线; 穿过第二导电类型的第二半导体层的沟槽到达第一导电类型的第一半导体层，并且还在元件区域和栅极布线之下延伸; 设置在所述元件区域的所述沟槽内部的栅电极，其间插入有栅极绝缘膜; 以及栅极引线部分，其设置在栅极布线下方的沟槽内部，栅极绝缘膜介于其间并与栅极布线和栅电极接触。

    Optical Coupling Device
    5.
    发明申请
    Optical Coupling Device 审中-公开
    光耦合器件

    公开(公告)号：US20060197112A1

    公开(公告)日：2006-09-07

    申请号：US11275020

    申请日：2005-12-02

    申请人： Takeshi Uchihara ,  Yasunori Usui ,  Takashi Nishimura

    发明人： Takeshi Uchihara ,  Yasunori Usui ,  Takashi Nishimura

    IPC分类号： H01L29/76

    CPC分类号： H01L31/12 ,  H03K17/78 ,  H03K17/785

    摘要： In various aspects, an optical coupling device may include a light emitting element configured to emit an optical signal; a photo receiving element having a serial connected of photo diodes, the photo receiving element configured to receive the optical signal and generate an electrical signal; and a control circuit having an active element, a source and a drain of the active element connected to both ends of the photo receiving element; wherein the breakdown voltage of the control circuit is no more than an open circuit voltage of the photo receiving element.

    摘要翻译： 在各个方面，光耦合装置可以包括被配置为发射光信号的发光元件; 光接收元件，其具有光电二极管的串联连接，所述光接收元件被配置为接收所述光信号并产生电信号; 以及控制电路，其具有有源元件，所述有源元件的源极和漏极连接到所述光接收元件的两端; 其中所述控制电路的击穿电压不超过所述光接收元件的开路电压。

    MOSFET and optical coupling device having the same
    6.
    发明申请
    MOSFET and optical coupling device having the same 审中-公开
    MOSFET和具有其的光耦合器件

    公开(公告)号：US20060170041A1

    公开(公告)日：2006-08-03

    申请号：US11335602

    申请日：2006-01-20

    申请人： Takeshi Uchihara ,  Yasunori Usui ,  Hideyuki Ura

    发明人： Takeshi Uchihara ,  Yasunori Usui ,  Hideyuki Ura

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7838 ,  H01L29/417 ,  H03K17/941

    摘要： In various aspects, a MOSFET may include a semiconductor region of a first conductivity type; a first semiconductor region of a second conductivity type provided in the semiconductor region; a second semiconductor region of the first conductivity type provided in the semiconductor region, the second semiconductor region having a higher impurity concentration than the semiconductor region; a third semiconductor region of the second conductivity type provided on the second semiconductor region; a fourth semiconductor region of the second conductivity type configured to be contact with the first semiconductor region and the third semiconductor region, the fourth semiconductor region having a lower impurity concentration than the first semiconductor region and the third semiconductor region; a gate electrode provided on the fourth semiconductor region via a gate insulating layer, an edge of the gate electrode spaced from a junction between the first semiconductor region and the fourth semiconductor region.

    摘要翻译： 在各个方面，MOSFET可以包括第一导电类型的半导体区域; 设置在半导体区域中的第二导电类型的第一半导体区域; 设置在所述半导体区域中的所述第一导电类型的第二半导体区域，所述第二半导体区域具有比所述半导体区域更高的杂质浓度; 设置在第二半导体区域上的第二导电类型的第三半导体区域; 第二导电类型的第四半导体区域被配置为与第一半导体区域和第三半导体区域接触，第四半导体区域具有比第一半导体区域和第三半导体区域低的杂质浓度; 栅极，经由栅极绝缘层设置在第四半导体区域上，栅电极的边缘与第一半导体区域和第四半导体区域之间的接合部分间隔开。

    COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME 有权
    线圈材料及其制造方法

    公开(公告)号：US20120128997A1

    公开(公告)日：2012-05-24

    申请号：US13387965

    申请日：2011-03-22

    申请人： Masatada Numano ,  Michimasa Miyanaga ,  Takeshi Uchihara ,  Yukihiro Oishi ,  Nozomu Kawabe

    发明人： Masatada Numano ,  Michimasa Miyanaga ,  Takeshi Uchihara ,  Yukihiro Oishi ,  Nozomu Kawabe

    IPC分类号： C22F1/06 ,  C22C23/02 ,  B22D11/00 ,  B21B3/00

    CPC分类号： C22F1/00 ,  B21B3/003 ,  B21C47/04 ,  B21C47/26 ,  B21C47/326 ,  B22D11/001 ,  B22D11/124 ,  B22D11/22 ,  B22D41/50 ,  C21D8/021 ,  C21D9/68 ,  C22C23/00 ,  C22F1/06 ,  Y10T428/12292

    摘要： A coil material capable of contributing to an improvement of the productivity of a high-strength magnesium alloy sheet and a method for manufacturing the coil material are provided. Regarding the method for manufacturing a coil material through coiling of a sheet material formed from a metal into the shape of a cylinder, so as to produce the coil material, the sheet material is a cast material of a magnesium alloy discharged from a continuous casting machine and the thickness t (mm) thereof is 7 mm or less. The sheet material 1 is coiled with a coiler while the temperature T (° C.) of the sheet material 1 just before coiling is controlled to be a temperature at which the surface strain ((t/R)×100) represented by the thickness t and the bending radius R (mm) of the sheet material 1 becomes less than or equal to the elongation at room temperature of the sheet material 1.

    摘要翻译： 提供能够提高高强度镁合金板的生产率的线圈材料和制造线圈材料的方法。 关于通过将由金属形成的片状材料卷绕成圆筒状而制造线圈材料的方法，以制造线圈材料，片材是从连续铸造机器排出的镁合金的铸造材料 其厚度t（mm）为7mm以下。 片材1用卷取机卷绕，而刚好卷取前的片材1的温度T（℃）被控制为由厚度（（t / R）×100）表示的表面应变（（t / R）×100） t和片材1的弯曲半径R（mm）变得小于或等于片材1在室温下的伸长率。

    MOSFET
    9.
    发明授权
    MOSFET 失效

    公开(公告)号：US07537983B2

    公开(公告)日：2009-05-26

    申请号：US11344178

    申请日：2006-02-01

    申请人： Takeshi Uchihara ,  Yasunori Usui ,  Akira Tanioka ,  Takuma Hara

    发明人： Takeshi Uchihara ,  Yasunori Usui ,  Akira Tanioka ,  Takuma Hara

    IPC分类号： H01L21/84 ,  H01L21/8234

    CPC分类号： H01L29/7835 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7836 ,  H01L29/78624

    摘要： In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.

    摘要翻译： 在各个方面，MOSFET可以包括提供在绝缘层上的第一导电类型的有源区，该有源区具有第一部分和第二部分，第一部分比第二部分厚; 所述第一导电类型的基极区域设置在所述绝缘层上，所述基极区域具有比所述有源区域的第一部分高的杂质浓度，所述基极区域与所述有源区域的第一部分和所述绝缘层接触; 设置在所述绝缘层上的第二导电类型的漏极区域，所述漏极区域与所述有源区域的第二部分和所述绝缘层接触，所述漏极区域与所述基极区域间隔开; 设置在所述基底区域的表面上的所述第二导电类型的源极区域; 设置在源极区域，基极区域，有源区域和漏极区域上的栅极绝缘层; 以及设置在栅极绝缘层上的栅电极。