Disclosed here is a macro inspection apparatus for a sample such as a semiconductor wafer having a pattern formed thereon, the apparatus being capable of detecting abnormalities in dimension and size with high sensitivity.The inspection apparatus for a sample having pattern formed thereon includes: an illumination optical system which illuminates the sample having the pattern formed thereon; a detection optical system which receives scattered light from the pattern; an imaging device which is disposed over a pupil plane of the detection optical system, the imaging device acquiring Fourier images of the pattern; and a processing unit which compares the Fourier images with the Fourier image of the normal pattern to detect an irregularity of the pattern.