Invention Application
- Patent Title: NAND STEP UP VOLTAGE SWITCHING METHOD
- Patent Title (中): NAND升压电压切换方法
-
Application No.: US13892435Application Date: 2013-05-13
-
Publication No.: US20130250679A1Publication Date: 2013-09-26
- Inventor: Akira Goda , Taehoon Kim , Doyle Rivers , Roger Porter
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
Public/Granted literature
- US08730736B2 NAND step up voltage switching method Public/Granted day:2014-05-20
Information query
