公开(公告)号：US08730736B2

公开(公告)日：2014-05-20

申请号：US13892435

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Akira Goda ,  Taehoon Kim ,  Doyle Rivers ,  Roger Porter

IPC: G11C16/04

CPC classification number: G11C16/10 ,  G11C5/145 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

Abstract: Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.

Abstract translation: 具有用于根据正在编程的多电平单元的电平改变Vstep增量的切换点的方法和存储器包括在窄阈值电压情况下以较小的Vstep增量进行编程，并且在需要更快编程的较大Vstep增量下进行编程。

公开(公告)号：US20130250679A1

公开(公告)日：2013-09-26

申请号：US13892435

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Akira Goda ,  Taehoon Kim ,  Doyle Rivers ,  Roger Porter

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C5/145 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

Abstract: Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.

Abstract translation: 具有用于根据正在编程的多电平单元的电平改变Vstep增量的切换点的方法和存储器包括在窄阈值电压情况下以较小的Vstep增量进行编程，并且在需要更快编程的较大Vstep增量下进行编程。