发明申请
- 专利标题： THIN FILM FORMING METHOD
- 专利标题（中）： 薄膜成型方法
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申请号： US13619083申请日： 2012-09-14
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公开(公告)号： US20130252417A1公开(公告)日： 2013-09-26
- 发明人: Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
- 申请人： Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-061629 20100317
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.
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