Abstract:
An illuminating device includes light emitting elements extending in a lengthwise direction and a light guide plate having a first principal surface for emitting light from the light emitting elements and a second principal surface facing the first principal surface. The light guide plate has light guide regions corresponding to the light emitting elements. The light emitting elements overlap the light guide plate on a side of the second principal surface of the light guide plate in plan view. The side of the second principal surface of the light guide plate has first sectional surfaces, on which light originated from each of the light emitting elements is incident. The side of the second principal surface of the light guide plate has second sectional surfaces, each having a reflection surface for reflecting the light originated from each light emitting element toward the first sectional surface, corresponding to the light emitting elements.
Abstract:
An object of the present invention is to provide a display device capable of narrowing the area of the frame. In order to achieve this object, the display device according to the present invention has a substrate having a plurality of arranged display elements and a wiring layer of a power source on the peripheral side; a bank layer for mutually separating the display elements; an electrode layer for covering the plurality of display elements and the bank layer; and a sealing substrate for further covering the electrode layer by joining the peripheral portion of the substrate and the sealing portion circling around the periphery via a joining element such as an adhesive; wherein the periphery of the sealing substrate is positioned inside the periphery of the substrate, and the peripheral portion of the electrode layer is connected to the wiring of the power source within the sealing portion.
Abstract:
A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.
Abstract:
A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
Abstract:
A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.
Abstract:
A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.
Abstract:
An image display apparatus capable of switching a display mode between a directional display mode where a first image is displayed in a first viewing direction and a second image is displayed in a second viewing direction and a non-directional display mode where the same image is displayed in both the first and second viewing directions. The apparatus includes an image forming unit and an optical member. The optical member is disposed adjacent to an emitting side of the image forming unit and is used for switching the display mode. The optical member includes two light-transmitting plate members, a lens member disposed between the two plate members, a refractive-index variable medium sealed in a gap between the lens member and the two plate members, and a refractive-index adjusting unit that adjusts a refractive index of the refractive-index variable medium. in order to switch between the directional and non-directional display mode.
Abstract:
An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.
Abstract:
An agent for treating overactive bladder resulting from cerebral infarction, comprising administrating a compound having a cholinesterase inhibitory activity or a pharmacologically acceptable salt thereof.
Abstract:
A method for treating overactive bladder involved in aging, comprising administrating a compound having a cholinesterase inhibitory activity, a pharmacologically acceptable salt or a solvate thereof to a patient with the overactive bladder involved in aging.