发明申请
- 专利标题: Replacement Gate With Reduced Gate Leakage Current
- 专利标题(中): 降低闸门泄漏电流的更换门
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申请号: US13430755申请日: 2012-03-27
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公开(公告)号: US20130256802A1公开(公告)日: 2013-10-03
- 发明人: Hemanth Jagannathan , Ramachandra Divakaruni , Unoh Kwon , Vijay Narayanan , Ravikumar Ramachandran
- 申请人: Hemanth Jagannathan , Ramachandra Divakaruni , Unoh Kwon , Vijay Narayanan , Ravikumar Ramachandran
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L21/283
摘要:
Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material, which provides, in combination with other layer, a work function about 4.4 eV or less, and can include a material selected from tantalum carbide, metallic nitrides, and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel. Optionally, carbon doping can be introduced in the channel.