- 专利标题： MASK BLANK, METHOD OF MANUFACTURING THE SAME, TRANSFER MASK, AND METHOD OF MANUFACTURING THE SAME
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申请号： US13995751申请日： 2011-12-22
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公开(公告)号： US20130273738A1公开(公告)日： 2013-10-17
- 发明人: Kazuya Sakai , Masahiro Hashimoto
- 申请人： Kazuya Sakai , Masahiro Hashimoto
- 申请人地址： JP Shinjuku-ku, Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Shinjuku-ku, Tokyo
- 优先权： JP2010-287109 20101224; JP2010-287110 20101224
- 国际申请： PCT/JP2011/079779 WO 20111222
- 主分类号： G03F1/50
- IPC分类号： G03F1/50 ; H01L21/308
摘要：
Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.
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