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公开(公告)号：US20130177841A1
公开(公告)日：2013-07-11
申请号：US13823206
申请日：2011-09-29
IPC分类号： G03F1/50
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。
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2.发明授权公开(公告)号：US08221941B2
公开(公告)日：2012-07-17
申请号：US12647808
申请日：2009-12-28
申请人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
发明人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
IPC分类号： G03F1/22
CPC分类号： G03F1/32
摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。
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3.发明授权Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same 有权掩模毛坯，其制造方法，转印掩模及其制造方法公开(公告)号：US09091934B2
公开(公告)日：2015-07-28
申请号：US13995751
申请日：2011-12-22
申请人： Kazuya Sakai , Masahiro Hashimoto
发明人： Kazuya Sakai , Masahiro Hashimoto
IPC分类号： G03F1/50 , H01L21/3065 , G03F1/46 , H01L21/308 , H01L21/3213 , G03F1/82
CPC分类号： G03F1/50 , G03F1/46 , G03F1/82 , H01L21/3065 , H01L21/3081 , H01L21/3213 , H01L21/32136
摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.
摘要翻译： 提供了一种制造掩模坯料的方法，该掩模坯料具有改进的耐臭氧清洁等的清洁性能，因此能够防止由于清洁而引起的掩模性能的劣化。 该方法用于制造掩模坯料，其在基板上具有在其表面形成有由含有过渡金属的材料制成的抗反射层的薄膜，并进行使高浓度的臭氧气体与 浓度为50〜100体积％，从而形成表面改性层，该表面改性层包含在抗反射层的表面含有过渡金属的氧化物的强氧化物膜。
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4.发明申请METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权制造转移掩模的方法和制造半导体器件的方法公开(公告)号：US20110217635A1
公开(公告)日：2011-09-08
申请号：US13122680
申请日：2010-10-08
IPC分类号： G03F1/00
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。
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5.发明申请公开(公告)号：US20130273738A1
公开(公告)日：2013-10-17
申请号：US13995751
申请日：2011-12-22
申请人： Kazuya Sakai , Masahiro Hashimoto
发明人： Kazuya Sakai , Masahiro Hashimoto
IPC分类号： G03F1/50 , H01L21/308
CPC分类号： G03F1/50 , G03F1/46 , G03F1/82 , H01L21/3065 , H01L21/3081 , H01L21/3213 , H01L21/32136
摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.
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公开(公告)号：US09104112B2
公开(公告)日：2015-08-11
申请号：US13823206
申请日：2011-09-29
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。
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7.发明授权Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08658334B2
公开(公告)日：2014-02-25
申请号：US13501348
申请日：2010-10-08
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译： 提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。 图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。
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8.发明授权Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask 有权掩模毛坯制造方法，转印掩模制造方法，掩模毛坯和转印掩模公开(公告)号：US08535855B2
公开(公告)日：2013-09-17
申请号：US13109132
申请日：2011-05-17
申请人： Kazuya Sakai , Masahiro Hashimoto
发明人： Kazuya Sakai , Masahiro Hashimoto
CPC分类号： G03F1/54 , C03C17/225 , C03C17/23 , C03C23/007 , C03C2217/281 , C03C2217/29 , G03F1/50 , G03F1/68
摘要： Provided is a method of manufacturing a mask blank having a thin film on a transparent substrate. The method includes forming the thin film made of a material containing a transition metal on the transparent substrate and applying a superheated steam treatment to the thin film.
摘要翻译： 提供了在透明基板上制造具有薄膜的掩模坯料的方法。 该方法包括在透明基板上形成由含有过渡金属的材料制成的薄膜，并对薄膜进行过热蒸汽处理。
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9.发明申请TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权转移掩模，制造转移掩模的方法和制造半导体器件的方法公开(公告)号：US20120251931A1
公开(公告)日：2012-10-04
申请号：US13501348
申请日：2010-10-08
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译： 提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。 图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。
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10.发明授权Method of manufacturing transfer mask and method of manufacturing semiconductor device 有权传输掩模的制造方法和制造半导体器件的方法公开(公告)号：US08197993B2
公开(公告)日：2012-06-12
申请号：US13122680
申请日：2010-10-08
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。
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