发明申请
- 专利标题: THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
- 专利标题(中): 薄膜晶体管和平板显示装置
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申请号: US13922785申请日: 2013-06-20
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公开(公告)号: US20130277660A1公开(公告)日: 2013-10-24
- 发明人: Jin-Seong Park , Yeon-Gon Mo , Jae-Kyeong Jeong , Min-Kyu Kim , Hyun-Joong Chung , Tae-Kyung Ahn , Eun-Hyun Kim
- 申请人: Jin-Seong Park , Yeon-Gon Mo , Jae-Kyeong Jeong , Min-Kyu Kim , Hyun-Joong Chung , Tae-Kyung Ahn , Eun-Hyun Kim
- 优先权: KR10-2009-0002243 20090112
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.
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