Invention Application
- Patent Title: METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE
- Patent Title (中): 电解槽控制电镀半导体波形的方法与装置
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Application No.: US13869891Application Date: 2013-04-24
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Publication No.: US20130284604A1Publication Date: 2013-10-31
- Inventor: Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
- Applicant: Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
- Main IPC: C25D21/14
- IPC: C25D21/14 ; C25D17/00 ; C25D3/38

Abstract:
Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Public/Granted literature
- US09816196B2 Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte Public/Granted day:2017-11-14
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