发明申请
- 专利标题： Integrated Circuit Devices Including Stress Proximity Effects and Methods of Fabricating the Same
- 专利标题（中）： 包括应力接近效应的集成电路器件及其制造方法
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申请号： US13617582申请日： 2012-09-14
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公开(公告)号： US20130285143A1公开(公告)日： 2013-10-31
- 发明人: Chang-Woo Oh , Myung-Gil Kang , Young-Chai Jung
- 申请人： Chang-Woo Oh , Myung-Gil Kang , Young-Chai Jung
- 优先权： KR10-2012-0043279 20120425
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/088
摘要：
An integrated circuit can include first and second FETs of a particular conductivity type on a substrate, wherein a first source/drain region of the first FET is closer to a center of a first channel region of the first FET than a second source/drain region of the second FET is to a center of a second channel region of the second FET.
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