发明申请
US20130288078A1 Thin Film with Reduced Stress Anisotropy 审中-公开
具有降低应力各向异性的薄膜

Thin Film with Reduced Stress Anisotropy
摘要:
An apparatus and associated method may provide a magnetic element can have a thin film deposited on a cryogenic substrate. The thin film can additionally be stress tuned ,during primary annealing to reduce unwanted stress anisotropy. The thin film can be configured to have near zero internal stress after the primary annealing.
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