发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13462427申请日: 2012-05-02
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公开(公告)号: US20130292794A1公开(公告)日: 2013-11-07
- 发明人: Chih-Yang PAI , Kuo-Chi TU , Wen-Chuan CHIANG , Chung-Yen CHOU
- 申请人: Chih-Yang PAI , Kuo-Chi TU , Wen-Chuan CHIANG , Chung-Yen CHOU
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/762
摘要:
A semiconductor device includes a semiconductor substrate, an isolation structure disposed in the semiconductor substrate, a conductive layer disposed over the isolation structure, a capacitor disposed over the isolation structure, the capacitor including a top electrode, a bottom electrode, and a dielectric disposed between the top electrode and the bottom electrode, and a first contact electrically coupling the conductive layer and the bottom electrode, the bottom electrode substantially engaging the first contact on at least two faces.
公开/授权文献
- US08643074B2 Semiconductor device 公开/授权日:2014-02-04