发明申请
- 专利标题： MOS CAPACITORS WITH A FINFET PROCESS
- 专利标题（中）： 具有FINFET工艺的MOS电容器
-
申请号： US13476567申请日： 2012-05-21
-
公开(公告)号： US20130307043A1公开(公告)日： 2013-11-21
- 发明人: KANGGUO CHENG , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人： KANGGUO CHENG , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/02
摘要：
Capacitors include a first electrical terminal that has fins formed from doped semiconductor on a top layer of doped semiconductor on a semiconductor-on-insulator substrate; a second electrical terminal that has an undoped material having bottom surface shape that is complementary to the first electrical terminal, such that an interface area between the first electrical terminal and the second electrical terminal is larger than a capacitor footprint; and a dielectric layer separating the first and second electrical terminals.
公开/授权文献
- US08581320B1 MOS capacitors with a finfet process 公开/授权日：2013-11-12
信息查询
IPC分类:
