发明申请
- 专利标题: METHOD TO RESOLVE HOLLOW METAL DEFECTS IN INTERCONNECTS
- 专利标题(中): 在互连中解决中空金属缺陷的方法
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申请号: US13472555申请日: 2012-05-16
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公开(公告)号: US20130307151A1公开(公告)日: 2013-11-21
- 发明人: Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
- 申请人: Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.
公开/授权文献
- US09034664B2 Method to resolve hollow metal defects in interconnects 公开/授权日:2015-05-19
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