公开(公告)号：US08962467B2

公开(公告)日：2015-02-24

申请号：US13399266

申请日：2012-02-17

申请人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon ,  Junjing Bao

发明人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon ,  Junjing Bao

IPC分类号： H01L21/44

CPC分类号： H01L23/5256 ,  H01H69/02 ,  H01H85/046 ,  H01H2085/0275 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  Y10T29/49107 ,  H01L2924/00

摘要： Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow circuits. At the same time, prior to fuse blow, the fuse structure is able to operate normally. The damaged portion of the fuse conductor is made by forming an opening in a cap layer above a portion of the fuse conductor, and etching the fuse conductor. Preferably, the opening is aligned such that the damaged portion is on the top corner of the fuse conductor. A cavity can be formed in the insulator adjacent to the damaged fuse conductor. The damaged fuse structure having a cavity can be easily incorporated in a process of making integrated circuits having air gaps.

摘要翻译： 提供更可靠的保险丝熔断位置的结构及其制作方法。 在熔断器熔断之前，垂直金属保险丝熔断结构在熔丝导体有意损坏的部分。 损坏的部分有助于熔断器在已知位置中熔断，从而降低后吹回路中的电阻变化。 同时，在保险丝熔断之前，保险丝结构能够正常工作。 熔丝导体的损坏部分是通过在保险丝导体的一部分上方的盖层中形成开口，并蚀刻熔丝导体而制成的。 优选地，开口对准，使得损坏部分在熔丝导体的顶角上。 可以在与损坏的保险丝导体相邻的绝缘体中形成空腔。 具有空腔的损坏的保险丝结构可以容易地结合在制造具有气隙的集成电路的过程中。

公开(公告)号：US20130307151A1

公开(公告)日：2013-11-21

申请号：US13472555

申请日：2012-05-16

申请人： Griselda Bonilla ,  Junjing Bao ,  Samuel S. Choi ,  Ronald G. Filippi ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Griselda Bonilla ,  Junjing Bao ,  Samuel S. Choi ,  Ronald G. Filippi ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76849 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.

摘要翻译： 一种在互连和结构中修复空心金属空隙缺陷的方法。 抛光互连后，中空金属空隙缺陷变得可见。 缺陷的位置在很大程度上是可预测的。 修复方法将掩模材料图案化成可能出现缺陷的互连（以及有时相邻的介电层）上的开口。 在掩模孔中形成局部金属盖，以修复缺陷。 电介质盖覆盖局部金属盖和形成在相邻电介质层中的任何凹陷。

公开(公告)号：US09034664B2

公开(公告)日：2015-05-19

申请号：US13472555

申请日：2012-05-16

申请人： Griselda Bonilla ,  Junjing Bao ,  Samuel S. Choi ,  Ronald G. Filippi ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Griselda Bonilla ,  Junjing Bao ,  Samuel S. Choi ,  Ronald G. Filippi ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01L21/00 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/76849 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.

摘要翻译： 一种在互连和结构中修复空心金属空隙缺陷的方法。 抛光互连后，中空金属空隙缺陷变得可见。 缺陷的位置在很大程度上是可预测的。 修复方法将掩模材料图案化成可能出现缺陷的互连（和有时相邻的介电层）上的开口。 在掩模孔中形成局部金属盖，以修复缺陷。 电介质盖覆盖局部金属盖和形成在相邻电介质层中的任何凹陷。

公开(公告)号：US20130176073A1

公开(公告)日：2013-07-11

申请号：US13348011

申请日：2012-01-11

申请人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

发明人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

IPC分类号： H01H37/76 ,  H01L21/768 ,  B44C1/22 ,  H01L23/525

CPC分类号： H01L23/5256 ,  H01H2085/0275 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

摘要翻译： 公开了一种BEOL电子熔断器，其可靠地吹入通孔并且甚至可以在最窄的节距BEOL层中形成。 BEOL电子熔断器可以利用线路第一双镶嵌工艺形成，以创建一个亚光刻通孔，作为电子熔丝的可编程链路。 亚光刻通孔可以使用标准光刻图案化，并且通孔的横截面可以被调谐以匹配目标编程电流。

公开(公告)号：US09685404B2

公开(公告)日：2017-06-20

申请号：US13348011

申请日：2012-01-11

申请人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

发明人： Junjing Bao ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Dan Moy ,  Andrew H. Simon

IPC分类号： H01L21/768 ,  H01L23/525 ,  H01L23/522 ,  H01H85/02

CPC分类号： H01L23/5256 ,  H01H2085/0275 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

公开(公告)号：US09059169B2

公开(公告)日：2015-06-16

申请号：US13165087

申请日：2011-06-21

申请人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01L21/26 ,  H01L23/525 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5256 ,  H01L21/768 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： E-fuse structures in back end of the line (BEOL) interconnects and methods of manufacture are provided. The method includes forming an interconnect via in a substrate in alignment with a first underlying metal wire and forming an e-fuse via in the substrate, exposing a second underlying metal wire. The method further includes forming a defect with the second underlying metal wire and filling the interconnect via with metal and in contact with the first underlying metal wire thereby forming an interconnect structure. The method further includes filling the e-fuse via with the metal and in contact with the defect and the second underlying metal wire thereby forming an e-fuse structure.

摘要翻译： 提供线后端的电熔丝结构（BEOL）互连和制造方法。 该方法包括在衬底中与第一底层金属线对齐形成互连通孔，并在衬底中形成电熔丝通孔，露出第二下面的金属线。 该方法还包括用第二底层金属线形成缺陷并用金属填充互连通孔并与第一底层金属线接触，从而形成互连结构。 该方法还包括用金属填充e熔丝通孔并与缺陷和第二下面的金属线接触，从而形成电熔丝结构。

公开(公告)号：US20120326269A1

公开(公告)日：2012-12-27

申请号：US13165087

申请日：2011-06-21

申请人： GRISELDA BONILLA ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： GRISELDA BONILLA ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/5256 ,  H01L21/768 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： E-fuse structures in back end of the line (BEOL) interconnects and methods of manufacture are provided. The method includes forming an interconnect via in a substrate in alignment with a first underlying metal wire and forming an e-fuse via in the substrate, exposing a second underlying metal wire. The method further includes forming a defect with the second underlying metal wire and filling the interconnect via with metal and in contact with the first underlying metal wire thereby forming an interconnect structure. The method further includes filling the e-fuse via with the metal and in contact with the defect and the second underlying metal wire thereby forming an e-fuse structure.

摘要翻译： 提供线后端的电熔丝结构（BEOL）互连和制造方法。 该方法包括在衬底中与第一底层金属线对齐形成互连通孔，并在衬底中形成电熔丝通孔，露出第二下面的金属线。 该方法还包括用第二底层金属线形成缺陷并用金属填充互连通孔并与第一底层金属线接触，从而形成互连结构。 该方法还包括用金属填充e熔丝通孔并与缺陷和第二下面的金属线接触，从而形成电熔丝结构。

公开(公告)号：US09093164B2

公开(公告)日：2015-07-28

申请号：US13298661

申请日：2011-11-17

申请人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01H85/04 ,  G11C17/16 ,  H01L23/525 ,  H01L23/522 ,  G11C29/00 ,  H01H85/46 ,  H01L23/532

CPC分类号： G11C17/16 ,  G11C29/702 ,  H01H2085/466 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal fuse structure using redundant vias formed on one metal level in a stacked via metal fuse structure to force failures to occur in the metal level that does not have the redundant vias. The metal fuse structure includes a first dielectric layer having a conductor, a second dielectric layer above the first dielectric layer having a first conductive line and a first via, the first via is on the conductor, the first conductive line is on the first via, the first via is the only electrical connection between the first conductive line and the conductor, and a third dielectric layer above the second dielectric layer having a second conductive line, a second via and a third via, the second via and the third via are both on the first conductive line, the second conductive line is on both the first via and the second via.

摘要翻译： 一种金属熔断器结构，其使用在堆叠的通孔金属熔丝结构中的一个金属层上形成的冗余通孔，以迫使在不具有冗余通孔的金属层中发生故障。 金属熔丝结构包括具有导体的第一电介质层，在第一电介质层之上的第二电介质层，具有第一导电线和第一通孔，第一通孔位于导体上，第一导电线在第一通孔上， 所述第一通孔是所述第一导线与所述导体之间的唯一电连接，并且所述第二电介质层上方的第三电介质层具有第二导电线，第二通孔和第三通孔，所述第二通孔和所述第三通孔均为 在第一导线上，第二导线在第一通孔和第二通孔上。

公开(公告)号：US20130214894A1

公开(公告)日：2013-08-22

申请号：US13399266

申请日：2012-02-17

申请人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Ronald G. Filippi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01H85/04 ,  H01H69/02

CPC分类号： H01L23/5256 ,  H01H69/02 ,  H01H85/046 ,  H01H2085/0275 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  Y10T29/49107 ,  H01L2924/00

摘要： Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow circuits. At the same time, prior to fuse blow, the fuse structure is able to operate normally. The damaged portion of the fuse conductor is made by forming an opening in a cap layer above a portion of the fuse conductor, and etching the fuse conductor. Preferably, the opening is aligned such that the damaged portion is on the top corner of the fuse conductor. A cavity can be formed in the insulator adjacent to the damaged fuse conductor. The damaged fuse structure having a cavity can be easily incorporated in a process of making integrated circuits having air gaps.

公开(公告)号：US20130127584A1

公开(公告)日：2013-05-23

申请号：US13298661

申请日：2011-11-17

申请人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

发明人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Samuel S. Choi ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon

IPC分类号： H01H85/04

CPC分类号： G11C17/16 ,  G11C29/702 ,  H01H2085/466 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal fuse structure using redundant vias. The redundant vias are formed on one metal level in a stacked via metal fuse structure to force failures to occur in the metal level that does not have the redundant vias. The metal fuse structure includes: a first dielectric layer having a metal feature; a second dielectric layer having a first metal connector embedded therein; and a third dielectric layer having a second metal connector embedded therein. The metal connectors include at least one via and one line, and at least one metal connector has at least two vias.

摘要翻译： 使用冗余通孔的金属保险丝结构。 冗余通孔在堆叠的通孔金属熔断器结构中的一个金属层上形成，以迫使在不具有冗余通孔的金属层中发生故障。 金属熔丝结构包括：具有金属特征的第一介电层; 第二电介质层，其中嵌有第一金属连接器; 以及具有嵌入其中的第二金属连接器的第三电介质层。 金属连接器包括至少一个通孔和一条线，并且至少一个金属连接器具有至少两个通孔。