发明申请
- 专利标题: SEMICONDUCTOR ACTIVE MATRIX ON BURIED INSULATOR
- 专利标题(中): 半导体绝缘子上的半导体有源矩阵
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申请号: US13472584申请日: 2012-05-16
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公开(公告)号: US20130309791A1公开(公告)日: 2013-11-21
- 发明人: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L33/52
- IPC分类号: H01L33/52 ; H01L21/50
摘要:
A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.
公开/授权文献
- US08658444B2 Semiconductor active matrix on buried insulator 公开/授权日:2014-02-25
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