发明申请
US20130309791A1 SEMICONDUCTOR ACTIVE MATRIX ON BURIED INSULATOR 有权
半导体绝缘子上的半导体有源矩阵

SEMICONDUCTOR ACTIVE MATRIX ON BURIED INSULATOR
摘要:
A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.
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