发明申请
- 专利标题： Method of Forming a Semiconductor Device
- 专利标题（中）： 形成半导体器件的方法
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申请号： US13471986申请日： 2012-05-15
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公开(公告)号： US20130309829A1公开(公告)日： 2013-11-21
- 发明人: Ziwei Fang , Tsan-Chun Wang , De-Wei Yu
- 申请人： Ziwei Fang , Tsan-Chun Wang , De-Wei Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.
公开/授权文献
- US08877599B2 Method of forming a semiconductor device 公开/授权日：2014-11-04
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