发明申请
- 专利标题： MAGNETIC RANDOM ACCESS MEMORY
- 专利标题（中）： 磁性随机存取存储器
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申请号： US13768858申请日： 2013-02-15
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公开(公告)号： US20130311717A1公开(公告)日： 2013-11-21
- 发明人: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rok Oh , Soo-ho Cha
- 申请人： Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rok Oh , Soo-ho Cha
- 申请人地址： JP YOKOHAMA-SHI, KANAGAWA JP YOKOHAMA-SHI, KANAGAWA,
- 专利权人： GLOBIT CO., LTD.,DIGITAL MEDIA RESEARCH INSTITUTE, INC.
- 当前专利权人： GLOBIT CO., LTD.,DIGITAL MEDIA RESEARCH INSTITUTE, INC.
- 当前专利权人地址： JP YOKOHAMA-SHI, KANAGAWA JP YOKOHAMA-SHI, KANAGAWA,
- 优先权： KR10-2012-0052594 20120517
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G06F12/02
摘要：
A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.