- 专利标题: REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME
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申请号: US13533229申请日: 2012-06-26
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公开(公告)号: US20130312819A1公开(公告)日: 2013-11-28
- 发明人: Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人: Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/02
- IPC分类号: H01L31/02 ; H01L29/06
摘要:
A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.
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