发明申请
- 专利标题: DILUTE SN-DOPED GE ALLOYS
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申请号: US13885121申请日: 2011-11-18
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公开(公告)号: US20130313579A1公开(公告)日: 2013-11-28
- 发明人: John Kouvetakis , Richard Beeler , Jose Menendez , Radek Roucka
- 申请人: John Kouvetakis , Richard Beeler , Jose Menendez , Radek Roucka
- 国际申请: PCT/US11/61375 WO 20111118
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L31/028 ; H01L21/02
摘要:
Detectors based on such Ge(Sn) alloys of the formula Ge1-xSnx (e.g., 0