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    Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
    3.
    发明授权
    Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer 有权
    通过反射晶格匹配的二硼化硼缓冲层在硅衬底上外延生长III族氮化物

    公开(公告)号：US07781356B2

    公开(公告)日：2010-08-24

    申请号：US10545484

    申请日：2004-02-12

    申请人： John Kouvetakis ,  Ignatius S. T. Tsong ,  John Tolle ,  Radek Roucka

    发明人： John Kouvetakis ,  Ignatius S. T. Tsong ,  John Tolle ,  Radek Roucka

    IPC分类号： C04B35/58 ,  C30B25/00

    CPC分类号： C30B25/02 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

    摘要： A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB2, AlB2 or HfB2. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or Al2O3. The group III nitride material includes GaN, AlN, InN, AlGaN, InGaN or AlInGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrB2 and the substrate is Si(111) or Si(100) and the group III nitride layer comprises GaN. The ZrB2 buffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes.

    摘要翻译： 提供了一种用于将宽带隙氮化物与硅结合的半导体结构和制造方法。 该结构包括衬底，通过衬底上的外延形成的单晶缓冲层和通过缓冲层上的外延形成的III族氮化物膜。 缓冲层是反射和导电的。 缓冲层可以包含选自由Zr，Hf，Al组成的组的元素。 例如，缓冲层可以包括ZrB2，AlB2或HfB2。 缓冲层提供与III族氮化物层的晶格匹配。 衬底可以包括硅，碳化硅（SiC），砷化镓（GaAs），蓝宝石或Al2O3。 III族氮化物材料包括GaN，AlN，InN，AlGaN，InGaN或AlInGaN，并且可以形成有源区。 在目前优选的实施方案中，缓冲层是ZrB 2，衬底是Si（111）或Si（100），III族氮化物层包括GaN。 ZrB2缓冲层提供与GaN具有小的晶格失配的反射和导电缓冲层。 半导体结构可用于制造有源微电子器件，例如包括场效应晶体管和双极晶体管的晶体管。 该半导体结构也可用于制造诸如激光二极管和发光二极管之类的光电器件。

    Low temperature epitaxial growth of quaternary wide bandgap semiconductors
    5.
    发明授权
    Low temperature epitaxial growth of quaternary wide bandgap semiconductors 失效
    四元宽带隙半导体的低温外延生长

    公开(公告)号：US06911084B2

    公开(公告)日：2005-06-28

    申请号：US09981024

    申请日：2001-10-16

    申请人： John Kouvetakis ,  Ignatius S. T. Tsong ,  Radek Roucka ,  John Tolle

    发明人： John Kouvetakis ,  Ignatius S. T. Tsong ,  Radek Roucka ,  John Tolle

    IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/26 ,  H01S5/30 ,  H01S5/32 ,  C30B25/08

    CPC分类号： H01L33/26 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01S5/30 ,  H01S5/3027 ,  H01S5/32 ,  H01S2304/02

    摘要： A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.

    摘要翻译： 提供了在550-750℃的温度下生长具有式YCZN的四元外延膜的方法，其中Y是IV族元素，Z是III族元素。 在该方法中，将前体H 3 YCN的气体流量和Z原子的蒸气通量引入气体分子束外延（GSMBE）室中，在其中它们结合形成YCZN的薄膜， 底物。 优选的衬底是硅，碳化硅和AlN /硅结构。 提供外延薄膜SiCA1N和GeCA1N。 通过调整GSMBE工艺的反应参数和四元合金薄膜成分的相对浓度，可以通过该方法实现带隙工程。 通过本方法制造的半导体器件具有约2eV至约6eV的带隙，并且具有从可见到紫外线的光谱范围，使得它们可用于各种光电子和微电子应用。 用于生长常规III族氮化物和化合物的大面积衬底由沉积在大直径硅晶片上的SiCAlN产生。 四元化合物，特别是含硼化合物，具有极高的硬度。 这些四元化合物具有耐辐射性，可用于太空探索。

    Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications
    7.
    发明申请
    Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications 有权
    锆和铪硼化物合金模板在硅上用于氮化物一体化应用

    公开(公告)号：US20080164570A1

    公开(公告)日：2008-07-10

    申请号：US11969689

    申请日：2008-01-04

    申请人： John Kouvetakis ,  Radek Roucka

    发明人： John Kouvetakis ,  Radek Roucka

    IPC分类号： H01L21/36 ,  H01L29/06

    CPC分类号： H01L29/24 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.

    摘要翻译： 提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。 此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。

    Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
    8.
    发明授权
    Zirconium and hafnium boride alloy templates on silicon for nitride integration applications 失效
    锆和硼化铪合金模板在硅上用于氮化物集成应用

    公开(公告)号：US08545627B2

    公开(公告)日：2013-10-01

    申请号：US13085115

    申请日：2011-04-12

    申请人： John Kouvetakis ,  Radek Roucka

    发明人： John Kouvetakis ,  Radek Roucka

    IPC分类号： H01L21/02 ,  C04B35/58 ,  C30B25/00

    CPC分类号： H01L29/24 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.

    摘要翻译： 提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。 此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。

    Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
    9.
    发明授权
    Zirconium and hafnium boride alloy templates on silicon for nitride integration applications 有权
    锆和硼化铪合金模板在硅上用于氮化物集成应用

    公开(公告)号：US08803194B2

    公开(公告)日：2014-08-12

    申请号：US11969689

    申请日：2008-01-04

    申请人： John Kouvetakis ,  Radek Roucka

    发明人： John Kouvetakis ,  Radek Roucka

    IPC分类号： C04B35/58 ,  C30B25/00 ,  H01L21/02

    CPC分类号： H01L29/24 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.

    摘要翻译： 提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。 此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。

    Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications
    10.
    发明申请
    Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications 失效
    锆和铪硼化物合金模板在硅上用于氮化物一体化应用

    公开(公告)号：US20110189838A1

    公开(公告)日：2011-08-04

    申请号：US13085115

    申请日：2011-04-12

    申请人： John Kouvetakis ,  Radek Roucka

    发明人： John Kouvetakis ,  Radek Roucka

    IPC分类号： H01L21/20 ,  H01L21/02

    CPC分类号： H01L29/24 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.

    摘要翻译： 提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。 此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。