发明申请
- 专利标题: Semiconductor Device with Trench Structures
- 专利标题(中): 具有沟槽结构的半导体器件
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申请号: US13487540申请日: 2012-06-04
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公开(公告)号: US20130320487A1公开(公告)日: 2013-12-05
- 发明人: Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Holger Schulze
- 申请人: Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Holger Schulze
- 申请人地址: AT Villach
- 专利权人: INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人: INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址: AT Villach
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L21/762
摘要:
A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.