发明申请
- 专利标题： PROGRAMMING METHODS FOR THREE-DIMENSIONAL MEMORY DEVICES HAVING MULTI-BIT PROGRAMMING, AND THREE-DIMENSIONAL MEMORY DEVICES PROGRAMMED THEREBY
- 专利标题（中）： 具有多位编程的三维存储器件的编程方法，以及编程的三维存储器件
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申请号： US13962451申请日： 2013-08-08
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公开(公告)号： US20130322172A1公开(公告)日： 2013-12-05
- 发明人: Sunil Shim , Sunghoi Hur , Kihyun Kim , Hansoo Kim , Jaehun Jeong
- 申请人： Sunil Shim , Sunghoi Hur , Kihyun Kim , Hansoo Kim , Jaehun Jeong
- 优先权： KR10-2009-0055073 20090619
- 主分类号： G11C16/10
- IPC分类号： G11C16/10
摘要：
In a method of multiple-bit programming of a three-dimensional memory device having arrays of memory cells that extend in horizontal and vertical directions relative to a substrate, the method comprises first programming a memory cell to be programmed to one among a first set of states. At least one neighboring memory cell that neighbors the memory cell to be programmed to one among the first set of states is then first programmed. Following the first programming of the at least one neighboring memory cell, second programming the memory cell to be programmed to one among a second set of states, wherein the second set of states has a number of states that is greater than the number of states in the first set of states.